Ambipolar diffusion length in a-Si:H(F) and a-Si,Ge:H,F measured with the steady-state photocarrier grating technique

J. Z. Liu, X. Li, P. Roca i Cabarrocas, J. P. Conde, A. Maruyama, H. Park, S. Wagner, A. E. Delahoy

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

The ambipolar diffusion lengths in 14 samples of a-Si:H, a-Si:H,F, and a-Si,Ge:H,F were measured using the steady-state photocarrier grating technique. The Tauc optical gap of these samples ranges from 1.73 eV to 1.13 eV. A diffusion length of 0.4 μm was observed in one a-Si:H,F sample. The diffusion length saturates at approximately 0.03 μm as the bandgap of the alloys decreases, probably due to the resolution limit of the technique. The diffusion length decreases as the bandgap decreases, as the bulk defect density increases, as the Urbach energy increases, and as the Fermi level increases. The observed correlations are explained qualitatively by existing models for carrier recombination.

Original languageEnglish (US)
Pages (from-to)1606-1609
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Volume2
StatePublished - May 1990
EventTwenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA
Duration: May 21 1990May 25 1990

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Ambipolar diffusion length in a-Si:H(F) and a-Si,Ge:H,F measured with the steady-state photocarrier grating technique'. Together they form a unique fingerprint.

Cite this