Ambipolar diffusion length measurements on hydrogenated amorphous silicon p-i-n structures

I. Balberg; A. E. Delahoy; H. A. Weakliem

doi:10.1063/1.100332

Ambipolar diffusion length measurements on hydrogenated amorphous silicon p-i-n structures

I. Balberg, A. E. Delahoy, H. A. Weakliem

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Abstract

The determination of the ambipolar diffusion length within the i layer of a p-i-n structure made of hydrogenated amorphous silicon is reported for the first time. It is shown that this important parameter can be determined by measurements carried out on the entire structure. One finds for a typical cell structure that the measured diffusion length is 10-20% smaller than the true i-layer value.

Original language	English (US)
Pages (from-to)	1949-1951
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	20
DOIs	https://doi.org/10.1063/1.100332
State	Published - 1988
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100332

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@article{d6d7837d54294ec7913543423ba27cbf,

title = "Ambipolar diffusion length measurements on hydrogenated amorphous silicon p-i-n structures",

abstract = "The determination of the ambipolar diffusion length within the i layer of a p-i-n structure made of hydrogenated amorphous silicon is reported for the first time. It is shown that this important parameter can be determined by measurements carried out on the entire structure. One finds for a typical cell structure that the measured diffusion length is 10-20% smaller than the true i-layer value.",

author = "I. Balberg and Delahoy, {A. E.} and Weakliem, {H. A.}",

year = "1988",

doi = "10.1063/1.100332",

language = "English (US)",

volume = "53",

pages = "1949--1951",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Ambipolar diffusion length measurements on hydrogenated amorphous silicon p-i-n structures

AU - Balberg, I.

AU - Delahoy, A. E.

AU - Weakliem, H. A.

PY - 1988

Y1 - 1988

N2 - The determination of the ambipolar diffusion length within the i layer of a p-i-n structure made of hydrogenated amorphous silicon is reported for the first time. It is shown that this important parameter can be determined by measurements carried out on the entire structure. One finds for a typical cell structure that the measured diffusion length is 10-20% smaller than the true i-layer value.

AB - The determination of the ambipolar diffusion length within the i layer of a p-i-n structure made of hydrogenated amorphous silicon is reported for the first time. It is shown that this important parameter can be determined by measurements carried out on the entire structure. One finds for a typical cell structure that the measured diffusion length is 10-20% smaller than the true i-layer value.

UR - http://www.scopus.com/inward/record.url?scp=36549098004&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549098004&partnerID=8YFLogxK

U2 - 10.1063/1.100332

DO - 10.1063/1.100332

M3 - Article

AN - SCOPUS:36549098004

SN - 0003-6951

VL - 53

SP - 1949

EP - 1951

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Ambipolar diffusion length measurements on hydrogenated amorphous silicon p-i-n structures

Abstract

All Science Journal Classification (ASJC) codes

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