Ambipolar transport in CVD grown MoSe₂ monolayer using an ionic liquid gel gate dielectric

Keyphrases

• Ionic Liquid 100%
• Gate Dielectric 100%
• CVD-grown 100%
• Ambipolar Transport 100%
• MoS2 Monolayer 100%
• Ionic Liquid Gel 100%
• Field-effect Transistors 66%
• Low Power 33%
• Device Performance 33%
• Room Temperature 33%
• Radiative Recombination 33%
• Dielectric 33%
• Optoelectronic Applications 33%
• Silica 33%
• Low Voltage 33%
• Contact Resistance 33%
• Molybdenum Trioxide 33%
• Operating Voltage 33%
• Metal-semiconductor Contact 33%
• Schottky Barrier 33%
• Inverter 33%
• Charge Injection 33%
• Specific Capacitance 33%
• MoSe2 33%
• High Specific Capacitance 33%
• Ambipolar Device 33%
• Sodium Cholate 33%
• Common Metals 33%
• Ammonium Heptamolybdate 33%
• Transistor Control 33%
• Lager 33%
• Ambipolar Charge Transport 33%
• Induced Charge Density 33%
• Ionic Liquid Gating 33%
• Growth Areas 33%

Engineering

• Monolayer 100%
• Chemical Vapor Deposition 100%
• Gate Dielectric 100%
• Field-Effect Transistor 66%
• Device Performance 33%
• Room Temperature 33%
• Induced Charge 33%
• Optoelectronics 33%
• Radiative Recombination 33%
• Dielectrics 33%
• Operating Voltage 33%
• Simplifies 33%
• Charge Transport 33%
• Schottky Barrier 33%
• Charge Density 33%
• Charge Injection 33%
• Common Metal 33%

Material Science

• Dielectric Material 100%
• Monolayers 100%
• Ionic Liquid 100%
• Chemical Vapor Deposition 100%
• Capacitance 40%
• Field Effect Transistor 40%
• Sodium 20%
• Density 20%
• Powder 20%
• Contact Resistance 20%
• Schottky Barrier 20%