An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

Joseph S. Weiner; Jaesik S. Lee; Andreas Leven; Yves Baeyens; Vincent Houtsma; George Georgiou; Yang Yang; John Frackoviak; Alaric Tate; Roberto Reyes; Rose F. Kopf; Wei Jer Sung; Nils G. Weimann; Young Kai Chen

doi:10.1109/JSSC.2004.833565

An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

Joseph S. Weiner, Jaesik S. Lee, Andreas Leven, Yves Baeyens, Vincent Houtsma, George Georgiou, Yang Yang, John Frackoviak, Alaric Tate, Roberto Reyes, Rose F. Kopf, Wei Jer Sung, Nils G. Weimann, Young Kai Chen

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.

Original language	English (US)
Pages (from-to)	1720-1723
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	39
Issue number	10
DOIs	https://doi.org/10.1109/JSSC.2004.833565
State	Published - Oct 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

Indium phosphide (INP)
Monolithic microwave integrated circuit (MMIC)
Opto-electronic integrated circuit (OEIC)
Transimpedance amplifier (TIA)

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10.1109/JSSC.2004.833565

Cite this

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title = "An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth",

abstract = "Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.",

keywords = "Indium phosphide (INP), Monolithic microwave integrated circuit (MMIC), Opto-electronic integrated circuit (OEIC), Transimpedance amplifier (TIA)",

author = "Weiner, {Joseph S.} and Lee, {Jaesik S.} and Andreas Leven and Yves Baeyens and Vincent Houtsma and George Georgiou and Yang Yang and John Frackoviak and Alaric Tate and Roberto Reyes and Kopf, {Rose F.} and Sung, {Wei Jer} and Weimann, {Nils G.} and Chen, {Young Kai}",

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doi = "10.1109/JSSC.2004.833565",

language = "English (US)",

volume = "39",

pages = "1720--1723",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

AU - Weiner, Joseph S.

AU - Lee, Jaesik S.

AU - Leven, Andreas

AU - Baeyens, Yves

AU - Houtsma, Vincent

AU - Georgiou, George

AU - Yang, Yang

AU - Frackoviak, John

AU - Tate, Alaric

AU - Reyes, Roberto

AU - Kopf, Rose F.

AU - Sung, Wei Jer

AU - Weimann, Nils G.

AU - Chen, Young Kai

PY - 2004/10

Y1 - 2004/10

N2 - Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.

AB - Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.

KW - Indium phosphide (INP)

KW - Monolithic microwave integrated circuit (MMIC)

KW - Opto-electronic integrated circuit (OEIC)

KW - Transimpedance amplifier (TIA)

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JF - IEEE Journal of Solid-State Circuits

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An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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