An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

Joseph S. Weiner, Jaesik S. Lee, Andreas Leven, Yves Baeyens, Vincent Houtsma, George Georgiou, Yang Yang, John Frackoviak, Alaric Tate, Roberto Reyes, Rose F. Kopf, Wei Jer Sung, Nils G. Weimann, Young Kai Chen

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.

Original languageEnglish (US)
Pages (from-to)1720-1723
Number of pages4
JournalIEEE Journal of Solid-State Circuits
Volume39
Issue number10
DOIs
StatePublished - Oct 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Indium phosphide (INP)
  • Monolithic microwave integrated circuit (MMIC)
  • Opto-electronic integrated circuit (OEIC)
  • Transimpedance amplifier (TIA)

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