An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

Joseph S. Weiner; Jaesik S. Lee; Andreas Leven; Yves Baeyens; Vincent Houtsma; George Georgiou; Yang Yang; John Frackoviak; Alaric Tate; Roberto Reyes; Rose F. Kopf; Wei Jer Sung; Nils G. Weimann; Young Kai Chen

doi:10.1109/JSSC.2004.833565

An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

Joseph S. Weiner
, Jaesik S. Lee
, Andreas Leven
, Yves Baeyens
, Vincent Houtsma
, George Georgiou
, Yang Yang
, John Frackoviak
, Alaric Tate
, Roberto Reyes
, Rose F. Kopf
, Wei Jer Sung
, Nils G. Weimann
, Young Kai Chen

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.

Original language	English (US)
Pages (from-to)	1720-1723
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	39
Issue number	10
DOIs	https://doi.org/10.1109/JSSC.2004.833565
State	Published - Oct 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

Indium phosphide (INP)
Monolithic microwave integrated circuit (MMIC)
Opto-electronic integrated circuit (OEIC)
Transimpedance amplifier (TIA)

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10.1109/JSSC.2004.833565

Cite this

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title = "An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth",

abstract = "Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.",

keywords = "Indium phosphide (INP), Monolithic microwave integrated circuit (MMIC), Opto-electronic integrated circuit (OEIC), Transimpedance amplifier (TIA)",

author = "Weiner, \{Joseph S.\} and Lee, \{Jaesik S.\} and Andreas Leven and Yves Baeyens and Vincent Houtsma and George Georgiou and Yang Yang and John Frackoviak and Alaric Tate and Roberto Reyes and Kopf, \{Rose F.\} and Sung, \{Wei Jer\} and Weimann, \{Nils G.\} and Chen, \{Young Kai\}",

year = "2004",

month = oct,

doi = "10.1109/JSSC.2004.833565",

language = "English (US)",

volume = "39",

pages = "1720--1723",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

AU - Weiner, Joseph S.

AU - Lee, Jaesik S.

AU - Leven, Andreas

AU - Baeyens, Yves

AU - Houtsma, Vincent

AU - Georgiou, George

AU - Yang, Yang

AU - Frackoviak, John

AU - Tate, Alaric

AU - Reyes, Roberto

AU - Kopf, Rose F.

AU - Sung, Wei Jer

AU - Weimann, Nils G.

AU - Chen, Young Kai

PY - 2004/10

Y1 - 2004/10

N2 - Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.

AB - Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.

KW - Indium phosphide (INP)

KW - Monolithic microwave integrated circuit (MMIC)

KW - Opto-electronic integrated circuit (OEIC)

KW - Transimpedance amplifier (TIA)

UR - https://www.scopus.com/pages/publications/5444222183

UR - https://www.scopus.com/pages/publications/5444222183#tab=citedBy

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DO - 10.1109/JSSC.2004.833565

M3 - Article

AN - SCOPUS:5444222183

SN - 0018-9200

VL - 39

SP - 1720

EP - 1723

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 10

ER -

An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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