An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth

J. S. Weiner, J. S. Lee, A. Leven, Y. Baeyens, V. Houtsma, G. Georgiou, Y. Yang, J. Frackoviak, A. Tate, R. Reyes, R. F. Kopf, W. J. Sung, N. G. Weimann, Y. K. Chen

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, we describe an InGaAs/InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-ohms.

Original languageEnglish (US)
Pages245-248
Number of pages4
DOIs
StatePublished - Jan 1 2003
Externally publishedYes
EventGaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium - San Diego, CA, United States
Duration: Nov 9 2003Nov 12 2003

Other

OtherGaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium
CountryUnited States
CitySan Diego, CA
Period11/9/0311/12/03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Indium phosphide (InP)
  • Monolithic microwave integrated circuit (MMIC)
  • Optoelectronic integrated circuit (OEIC)
  • Transimpedance amplifier (TIA)

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