An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth

J. S. Weiner; J. S. Lee; A. Leven; Y. Baeyens; V. Houtsma; G. Georgiou; Y. Yang; J. Frackoviak; A. Tate; R. Reyes; R. F. Kopf; W. J. Sung; N. G. Weimann; Y. K. Chen

doi:10.1109/gaas.2003.1252404

An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth

J. S. Weiner
, J. S. Lee
, A. Leven
, Y. Baeyens
, V. Houtsma
, G. Georgiou
, Y. Yang
, J. Frackoviak
, A. Tate
, R. Reyes
, R. F. Kopf
, W. J. Sung
, N. G. Weimann
, Y. K. Chen

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, we describe an InGaAs/InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-ohms.

Original language	English (US)
Pages	245-248
Number of pages	4
DOIs	https://doi.org/10.1109/gaas.2003.1252404
State	Published - 2003
Externally published	Yes
Event	GaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium - San Diego, CA, United States Duration: Nov 9 2003 → Nov 12 2003

Other

Other	GaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium
Country/Territory	United States
City	San Diego, CA
Period	11/9/03 → 11/12/03

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

Indium phosphide (InP)
Monolithic microwave integrated circuit (MMIC)
Optoelectronic integrated circuit (OEIC)
Transimpedance amplifier (TIA)

Access to Document

10.1109/gaas.2003.1252404

Cite this

Weiner, J. S., Lee, J. S., Leven, A., Baeyens, Y., Houtsma, V., Georgiou, G., Yang, Y., Frackoviak, J., Tate, A., Reyes, R., Kopf, R. F., Sung, W. J., Weimann, N. G., & Chen, Y. K. (2003). An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth. 245-248. Paper presented at GaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium, San Diego, CA, United States. https://doi.org/10.1109/gaas.2003.1252404

@conference{b9fa2a6aba634921a35a6064d88bc1ea,

title = "An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth",

abstract = "In this paper, we describe an InGaAs/InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-ohms.",

keywords = "Indium phosphide (InP), Monolithic microwave integrated circuit (MMIC), Optoelectronic integrated circuit (OEIC), Transimpedance amplifier (TIA)",

author = "Weiner, \{J. S.\} and Lee, \{J. S.\} and A. Leven and Y. Baeyens and V. Houtsma and G. Georgiou and Y. Yang and J. Frackoviak and A. Tate and R. Reyes and Kopf, \{R. F.\} and Sung, \{W. J.\} and Weimann, \{N. G.\} and Chen, \{Y. K.\}",

year = "2003",

doi = "10.1109/gaas.2003.1252404",

language = "English (US)",

pages = "245--248",

note = "GaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium ; Conference date: 09-11-2003 Through 12-11-2003",

}

Weiner, JS, Lee, JS, Leven, A, Baeyens, Y, Houtsma, V, Georgiou, G, Yang, Y, Frackoviak, J, Tate, A, Reyes, R, Kopf, RF, Sung, WJ, Weimann, NG & Chen, YK 2003, 'An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth', Paper presented at GaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium, San Diego, CA, United States, 11/9/03 - 11/12/03 pp. 245-248. https://doi.org/10.1109/gaas.2003.1252404

TY - CONF

T1 - An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth

AU - Weiner, J. S.

AU - Lee, J. S.

AU - Leven, A.

AU - Baeyens, Y.

AU - Houtsma, V.

AU - Georgiou, G.

AU - Yang, Y.

AU - Frackoviak, J.

AU - Tate, A.

AU - Reyes, R.

AU - Kopf, R. F.

AU - Sung, W. J.

AU - Weimann, N. G.

AU - Chen, Y. K.

PY - 2003

Y1 - 2003

N2 - In this paper, we describe an InGaAs/InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-ohms.

AB - In this paper, we describe an InGaAs/InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-ohms.

KW - Indium phosphide (InP)

KW - Monolithic microwave integrated circuit (MMIC)

KW - Optoelectronic integrated circuit (OEIC)

KW - Transimpedance amplifier (TIA)

UR - https://www.scopus.com/pages/publications/0346935186

UR - https://www.scopus.com/pages/publications/0346935186#tab=citedBy

U2 - 10.1109/gaas.2003.1252404

DO - 10.1109/gaas.2003.1252404

M3 - Paper

AN - SCOPUS:0346935186

SP - 245

EP - 248

T2 - GaAs IC Symposium IEEE Gallium Arsenide Intergrated Circuit Symposium

Y2 - 9 November 2003 through 12 November 2003

ER -

An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth

Abstract

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All Science Journal Classification (ASJC) codes

Keywords

Access to Document

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