Analysis of electrical property parameters of CdS/CdTe solar cells fabricated by close space-sublimation

Shou Ren Zhao; Zhi Peng Huang; Lei Sun; Peng Chao Sun; Chuan Jun Zhang; Yun Hua Wu; Hong Cao; Shan Li Wang; Jun Hao Chu

doi:10.7498/aps.62.188801

Analysis of electrical property parameters of CdS/CdTe solar cells fabricated by close space-sublimation

Shou Ren Zhao, Zhi Peng Huang, Lei Sun, Peng Chao Sun, Chuan Jun Zhang, Yun Hua Wu, Hong Cao, Shan Li Wang, Jun Hao Chu

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

CdS/CdTe Thin film solar cells are grown in a homemade close-space sublimation system where the cell fabrication of p-n junction is carried out in a continuous, in-line process. The best efficiency achieved is about 11% (AM1.5). Another cell is prepared with the same procedure except for the n-CdS layer coated by sputtering (SP), achieving an efficiency of about 10% (AM1.5). Current density-voltage and external quantum efficiency measurements are analyzed and the solar cell performances are characterized. By the comparison between the practical fitted data and theoretical calculations, the method of improving CdS/CdTe solar cell efficiency, i.e., increasing the open-circuit voltage (V_oc), short circuit current (J_sc), and fill factor (FF), is proposed.

Original language	English (US)
Article number	188801
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	62
Issue number	18
DOIs	https://doi.org/10.7498/aps.62.188801
State	Published - Sep 20 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Keywords

Cdte solar cell
Current density-voltage curve
Electrical property
External quantum efficiency curve

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10.7498/aps.62.188801

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title = "Analysis of electrical property parameters of CdS/CdTe solar cells fabricated by close space-sublimation",

abstract = "CdS/CdTe Thin film solar cells are grown in a homemade close-space sublimation system where the cell fabrication of p-n junction is carried out in a continuous, in-line process. The best efficiency achieved is about 11% (AM1.5). Another cell is prepared with the same procedure except for the n-CdS layer coated by sputtering (SP), achieving an efficiency of about 10% (AM1.5). Current density-voltage and external quantum efficiency measurements are analyzed and the solar cell performances are characterized. By the comparison between the practical fitted data and theoretical calculations, the method of improving CdS/CdTe solar cell efficiency, i.e., increasing the open-circuit voltage (Voc), short circuit current (Jsc), and fill factor (FF), is proposed.",

keywords = "Cdte solar cell, Current density-voltage curve, Electrical property, External quantum efficiency curve",

author = "Zhao, {Shou Ren} and Huang, {Zhi Peng} and Lei Sun and Sun, {Peng Chao} and Zhang, {Chuan Jun} and Wu, {Yun Hua} and Hong Cao and Wang, {Shan Li} and Chu, {Jun Hao}",

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doi = "10.7498/aps.62.188801",

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T1 - Analysis of electrical property parameters of CdS/CdTe solar cells fabricated by close space-sublimation

AU - Zhao, Shou Ren

AU - Huang, Zhi Peng

AU - Sun, Lei

AU - Sun, Peng Chao

AU - Zhang, Chuan Jun

AU - Wu, Yun Hua

AU - Cao, Hong

AU - Wang, Shan Li

AU - Chu, Jun Hao

PY - 2013/9/20

Y1 - 2013/9/20

N2 - CdS/CdTe Thin film solar cells are grown in a homemade close-space sublimation system where the cell fabrication of p-n junction is carried out in a continuous, in-line process. The best efficiency achieved is about 11% (AM1.5). Another cell is prepared with the same procedure except for the n-CdS layer coated by sputtering (SP), achieving an efficiency of about 10% (AM1.5). Current density-voltage and external quantum efficiency measurements are analyzed and the solar cell performances are characterized. By the comparison between the practical fitted data and theoretical calculations, the method of improving CdS/CdTe solar cell efficiency, i.e., increasing the open-circuit voltage (Voc), short circuit current (Jsc), and fill factor (FF), is proposed.

AB - CdS/CdTe Thin film solar cells are grown in a homemade close-space sublimation system where the cell fabrication of p-n junction is carried out in a continuous, in-line process. The best efficiency achieved is about 11% (AM1.5). Another cell is prepared with the same procedure except for the n-CdS layer coated by sputtering (SP), achieving an efficiency of about 10% (AM1.5). Current density-voltage and external quantum efficiency measurements are analyzed and the solar cell performances are characterized. By the comparison between the practical fitted data and theoretical calculations, the method of improving CdS/CdTe solar cell efficiency, i.e., increasing the open-circuit voltage (Voc), short circuit current (Jsc), and fill factor (FF), is proposed.

KW - Cdte solar cell

KW - Current density-voltage curve

KW - Electrical property

KW - External quantum efficiency curve

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ER -

Analysis of electrical property parameters of CdS/CdTe solar cells fabricated by close space-sublimation

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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