@inproceedings{45330ce97298410e8d8d23b394b5d196,
title = "Analytical model for RESET operation of phase change memory",
abstract = "We present a novel analytical model for the RESET operation of Phase Change Memory (PCM) that explicitly describes the dependency of the programming current on various cell dimensions and material parameters. This model also explains, for the first time, the fundamental physics behind the inverse relationship between dynamic resistance (R d) and the amplitude of the programming current.",
author = "B. Rajendran and J. Karidis and Lee, {M. H.} and M. Breitwisch and Burr, {G. W.} and Shih, {Y. H.} and R. Cheek and A. Schrott and Lung, {H. L.} and C. Lam",
note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; 2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",
year = "2008",
doi = "10.1109/IEDM.2008.4796748",
language = "English (US)",
isbn = "9781424423781",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",
}