Analytical modeling of dual-gate HFET's

Wei Long, Li Heng Lee, Erhard Kohn, Ken K. Chin

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A simple analytical dual-gate hetero-structure fieldeffect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced gm/gd and Cgs/Cdg ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results.

Original languageEnglish (US)
Pages (from-to)1409-1417
Number of pages9
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume16
Issue number12
DOIs
StatePublished - Dec 1 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

Keywords

  • Device modeling
  • Dual gate
  • HFET

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