Analytical modeling of dual-gate HFET's

Wei Long; Li Heng Lee; Erhard Kohn; Ken K. Chin

doi:10.1109/43.664223

Analytical modeling of dual-gate HFET's

Wei Long, Li Heng Lee, Erhard Kohn, Ken K. Chin

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A simple analytical dual-gate hetero-structure fieldeffect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced gm/gd and Cgs/Cdg ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results.

Original language	English (US)
Pages (from-to)	1409-1417
Number of pages	9
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	16
Issue number	12
DOIs	https://doi.org/10.1109/43.664223
State	Published - 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Software
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

Keywords

Device modeling
Dual gate
HFET

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10.1109/43.664223

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title = "Analytical modeling of dual-gate HFET's",

abstract = "A simple analytical dual-gate hetero-structure fieldeffect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced gm/gd and Cgs/Cdg ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results.",

keywords = "Device modeling, Dual gate, HFET",

author = "Wei Long and Lee, {Li Heng} and Erhard Kohn and Chin, {Ken K.}",

year = "1997",

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TY - JOUR

T1 - Analytical modeling of dual-gate HFET's

AU - Long, Wei

AU - Lee, Li Heng

AU - Kohn, Erhard

AU - Chin, Ken K.

PY - 1997

Y1 - 1997

N2 - A simple analytical dual-gate hetero-structure fieldeffect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced gm/gd and Cgs/Cdg ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results.

AB - A simple analytical dual-gate hetero-structure fieldeffect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced gm/gd and Cgs/Cdg ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results.

KW - Device modeling

KW - Dual gate

KW - HFET

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DO - 10.1109/43.664223

M3 - Article

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SN - 0278-0070

VL - 16

SP - 1409

EP - 1417

JO - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

JF - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IS - 12

ER -

Analytical modeling of dual-gate HFET's

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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