Abstract
A simple analytical dual-gate hetero-structure fieldeffect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced gm/gd and Cgs/Cdg ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1409-1417 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems |
| Volume | 16 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1997 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Software
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering
Keywords
- Device modeling
- Dual gate
- HFET
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