Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga₂O₃ HEMT

Chemical Compounds

• Drain Current 100%
• Electron Mobility 77%
• Two-Dimensional Electron Gas 57%
• Surface Potential 35%
• Charge Density 31%
• Electric Field 29%
• Dimension 24%
• Polarization 24%
• Simulation 20%

Engineering & Materials Science

• Poisson equation 83%
• High electron mobility transistors 74%
• Two dimensional electron gas 56%
• Drain current 41%
• Computer simulation 35%
• Charge density 22%
• Surface potential 22%
• Electric fields 14%
• Polarization 14%
• Physics 14%
• Analytical models 13%

Physics & Astronomy

• Poisson equation 68%
• high electron mobility transistors 66%
• two dimensional models 17%
• barrier layers 17%
• electron gas 15%
• depletion 14%
• physics 10%
• electric fields 9%
• polarization 8%
• approximation 8%
• simulation 6%