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Annealing Behavior of Reactive Ion Etching Induced Deep Levels
D. Misra
, E. L. Heasell
Electrical and Computer Engineering
Research output
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Contribution to journal
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Article
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peer-review
9
Scopus citations
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Dive into the research topics of 'Annealing Behavior of Reactive Ion Etching Induced Deep Levels'. Together they form a unique fingerprint.
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Engineering & Materials Science
Reactive ion etching
100%
Electron traps
92%
Annealing
73%
Diodes
45%
Deep level transient spectroscopy
43%
Defects
16%
Temperature
9%
Chemical Compounds
Electron Trap
69%
Etching
66%
Annealing
58%
Deep Level Transient Spectroscopy
41%
Ion
29%
Surface
7%