Annealing effect on reliabilty of SiO 2 for deuterium implanted silicon

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Deuterium implantation in silicon substrate before the growth of gate oxide leads to enhanced interface passivation. This work studies the reliability of the gate oxide when the wafers were subjected to further annealing conditions at 600°C and 700°C after the oxide growth. Annealing behavior suggests that the interface and oxide reliability degrades for lower dose of implantation, 1×10 14/cm 2 whereas superior interface and oxide reliability was obtained for higher dose of implantation at 1×10 15/cm 2. Possible out diffusion of deuterium ions during annealing governed the interface and oxide degradation for lower dose. In case of higher dose, on the other hand, the improvement is attributed due to the interaction of deuterium with damage and passivation of intrinsic defects and dangling bonds in the transition SiO x layer.

Original languageEnglish (US)
Pages (from-to)221-231
Number of pages11
JournalECS Transactions
Issue number1
StatePublished - Dec 1 2005
Event5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 20 2005

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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