Deuterium implantation in silicon substrate before the growth of gate oxide leads to enhanced interface passivation. This work studies the reliability of the gate oxide when the wafers were subjected to further annealing conditions at 600°C and 700°C after the oxide growth. Annealing behavior suggests that the interface and oxide reliability degrades for lower dose of implantation, 1×1014/cm2 whereas superior interface and oxide reliability was obtained for higher dose of implantation at 1×1015/cm2. Possible out diffusion of deuterium ions during annealing governed the interface and oxide degradation for lower dose. In case of higher dose, on the other hand, the improvement is attributed due to the interaction of deuterium with damage and passivation of intrinsic defects and dangling bonds in the transition SiOx layer.
|Title of host publication
|Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5
|Electrochemical Society Inc.
|Number of pages
|Published - 2006
|5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005 → Oct 20 2005
|5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society
|Los Angeles, CA
|10/16/05 → 10/20/05
All Science Journal Classification (ASJC) codes