Annealing effect on reliabilty of SiO2 for deuterium implanted silicon

T. Kundu, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Deuterium implantation in silicon substrate before the growth of gate oxide leads to enhanced interface passivation. This work studies the reliability of the gate oxide when the wafers were subjected to further annealing conditions at 600°C and 700°C after the oxide growth. Annealing behavior suggests that the interface and oxide reliability degrades for lower dose of implantation, 1×1014/cm2 whereas superior interface and oxide reliability was obtained for higher dose of implantation at 1×1015/cm2. Possible out diffusion of deuterium ions during annealing governed the interface and oxide degradation for lower dose. In case of higher dose, on the other hand, the improvement is attributed due to the interaction of deuterium with damage and passivation of intrinsic defects and dangling bonds in the transition SiOx layer.

Original languageEnglish (US)
Title of host publicationPhysics and Chemistry of SiO2 and the Si-SiO2 Interface-5
PublisherElectrochemical Society Inc.
Pages221-231
Number of pages11
Edition1
ISBN (Electronic)9781607685395
StatePublished - 2006
Event5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 20 2005

Publication series

NameECS Transactions
Number1
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period10/16/0510/20/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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