Annealing effects on the optical properties of semiconducting boron carbide

R. B. Billa; T. Hofmann; M. Schubert; B. W. Robertson

doi:10.1063/1.3190679

Annealing effects on the optical properties of semiconducting boron carbide

R. B. Billa
, T. Hofmann
, M. Schubert
, B. W. Robertson

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Infrared vibrations of as-deposited and annealed semiconducting boron carbide thin films were investigated by midinfrared spectroscopic ellipsometry. The strong boron-hydrogen resonance at ∼2560 cm^-1 in as-deposited films reveals considerable hydrogen incorporation during plasma-enhanced chemical vapor deposition. Extended annealing at 600 °C caused significant reduction in film thickness, substantial reduction of boron-hydrogen bond resonance absorption, and development of distinct blue-shifted boron-carbon and icosahedral vibration mode resonances. Our findings suggest that annealing results in substantial loss of hydrogen and in development of icosahedral structure, accompanied by strain relaxation and densification.

Original language	English (US)
Article number	033515
Journal	Journal of Applied Physics
Volume	106
Issue number	3
DOIs	https://doi.org/10.1063/1.3190679
State	Published - 2009
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3190679

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@article{45dece3326004f98a6e45730cbb03a65,

title = "Annealing effects on the optical properties of semiconducting boron carbide",

abstract = "Infrared vibrations of as-deposited and annealed semiconducting boron carbide thin films were investigated by midinfrared spectroscopic ellipsometry. The strong boron-hydrogen resonance at ∼2560 cm-1 in as-deposited films reveals considerable hydrogen incorporation during plasma-enhanced chemical vapor deposition. Extended annealing at 600 °C caused significant reduction in film thickness, substantial reduction of boron-hydrogen bond resonance absorption, and development of distinct blue-shifted boron-carbon and icosahedral vibration mode resonances. Our findings suggest that annealing results in substantial loss of hydrogen and in development of icosahedral structure, accompanied by strain relaxation and densification.",

author = "Billa, \{R. B.\} and T. Hofmann and M. Schubert and Robertson, \{B. W.\}",

year = "2009",

doi = "10.1063/1.3190679",

language = "English (US)",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Annealing effects on the optical properties of semiconducting boron carbide

AU - Billa, R. B.

AU - Hofmann, T.

AU - Schubert, M.

AU - Robertson, B. W.

PY - 2009

Y1 - 2009

N2 - Infrared vibrations of as-deposited and annealed semiconducting boron carbide thin films were investigated by midinfrared spectroscopic ellipsometry. The strong boron-hydrogen resonance at ∼2560 cm-1 in as-deposited films reveals considerable hydrogen incorporation during plasma-enhanced chemical vapor deposition. Extended annealing at 600 °C caused significant reduction in film thickness, substantial reduction of boron-hydrogen bond resonance absorption, and development of distinct blue-shifted boron-carbon and icosahedral vibration mode resonances. Our findings suggest that annealing results in substantial loss of hydrogen and in development of icosahedral structure, accompanied by strain relaxation and densification.

AB - Infrared vibrations of as-deposited and annealed semiconducting boron carbide thin films were investigated by midinfrared spectroscopic ellipsometry. The strong boron-hydrogen resonance at ∼2560 cm-1 in as-deposited films reveals considerable hydrogen incorporation during plasma-enhanced chemical vapor deposition. Extended annealing at 600 °C caused significant reduction in film thickness, substantial reduction of boron-hydrogen bond resonance absorption, and development of distinct blue-shifted boron-carbon and icosahedral vibration mode resonances. Our findings suggest that annealing results in substantial loss of hydrogen and in development of icosahedral structure, accompanied by strain relaxation and densification.

UR - https://www.scopus.com/pages/publications/69149096255

UR - https://www.scopus.com/pages/publications/69149096255#tab=citedBy

U2 - 10.1063/1.3190679

DO - 10.1063/1.3190679

M3 - Article

AN - SCOPUS:69149096255

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 033515

ER -

Annealing effects on the optical properties of semiconducting boron carbide

Abstract

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