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Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers
N. Newman
,
K. K. Chin
, W. G. Petro
, T. Kendelewicz
, M. D. Williams
, C. E. McCants
, W. E. Spicer
Research output
:
Contribution to journal
›
Article
›
peer-review
35
Scopus citations
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Keyphrases
Annealing
100%
Gallium Arsenide
100%
Schottky Barrier
100%
Ag-Au
100%
Device-based Measures
50%
Metal-semiconductor Contact
50%
Electrical Properties
25%
Chemical Nature
25%
Electrical Devices
25%
Valence Band
25%
Diode
25%
Electronic Structure
25%
Chemical Structure
25%
Metal Film
25%
Strong Correlation
25%
GaAs Schottky Diode
25%
Metal-semiconductor Junction
25%
Annealing Effect
25%
Band Level
25%
Photoemission Spectroscopy
25%
Monolayer Coverage
25%
Capacitance-voltage
25%
Microscopic Changes
25%
Core-level Photoemission Spectroscopy
25%
Ultra-high Vacuum
25%
Macroscopic Changes
25%
Thick Metal
25%
Fermi Level Position
25%
Thick Film
25%
Submonolayer
25%
Barrier Height
25%
Current-voltage
25%
Height Determination
25%
Metal-semiconductor-metal
25%
Material Science
Photoemission Spectroscopy
100%
Gallium Arsenide
100%
Schottky Barrier
100%
Capacitance
50%
Metal Film
50%
Monolayers
50%
Structure (Composition)
50%
Annealing
50%
Thick Films
50%
Schottky Diode
50%
Metal-Semiconductor Junction
50%