TY - JOUR
T1 - Application of X-ray standing wave (XSW) technique for studies of Zn incorporation in InP epilayers
AU - Sirenko, A. A.
AU - Ougazzaden, A.
AU - Kazimirov, A.
N1 - Funding Information:
Authors would like to thank L. Ketelsen for support and encouragement of this work and S.N.G. Chu for useful discussions. The experiments at Cornell High-Energy Synchrotron Source (CHESS) have been supported by the National Science Foundation and the National Institutes of Health/National Institute of General Medical Sciences under award DMR 9713424.
PY - 2005/4
Y1 - 2005/4
N2 - We present a new approach to determine the site incorporation of p-type impurities in the doped layers of microelectronic device structures based on X-ray standing wave (XSW) technique. Activation behavior of Zn in InP epitaxial layers grown by metal organic vapor phase epitaxy (MOVPE) on InP(1 0 0) substrates has been studied. The XSW experiments were performed at the A2 beamline of the Cornell high-energy synchrotron source (CHESS). Angular dependences of the Zn-K fluorescence intensity excited by the XSW field inside the InP layer for symmetrical (4 0 0) reflection have been measured along with the Indium L-edge and phosphorus K-edge fluorescence and X-ray reflectivity. Analysis of the XSW data based on the dynamical diffraction theory in layered crystal structures allowed us to determine the fractions of both Zn atoms incorporated into crystal lattice and interstitial Zn. In our example, a 1 μm thick MOCVD-grown InP layer with the nominal concentration of Zn atoms of (2.4 ± 0.2) × 1018 cm-3 has the fraction of the substitutional Zn of (65 ± 5)%. This result is in a good agreement with electrical activation of Zn measured with a combination of SIMS and CV profilometry. The accurate knowledge of the interstitial-to-substitutional ratio as a function of growth conditions is required to optimize electrical activation of Zn and to control its diffusion in the device structures.
AB - We present a new approach to determine the site incorporation of p-type impurities in the doped layers of microelectronic device structures based on X-ray standing wave (XSW) technique. Activation behavior of Zn in InP epitaxial layers grown by metal organic vapor phase epitaxy (MOVPE) on InP(1 0 0) substrates has been studied. The XSW experiments were performed at the A2 beamline of the Cornell high-energy synchrotron source (CHESS). Angular dependences of the Zn-K fluorescence intensity excited by the XSW field inside the InP layer for symmetrical (4 0 0) reflection have been measured along with the Indium L-edge and phosphorus K-edge fluorescence and X-ray reflectivity. Analysis of the XSW data based on the dynamical diffraction theory in layered crystal structures allowed us to determine the fractions of both Zn atoms incorporated into crystal lattice and interstitial Zn. In our example, a 1 μm thick MOCVD-grown InP layer with the nominal concentration of Zn atoms of (2.4 ± 0.2) × 1018 cm-3 has the fraction of the substitutional Zn of (65 ± 5)%. This result is in a good agreement with electrical activation of Zn measured with a combination of SIMS and CV profilometry. The accurate knowledge of the interstitial-to-substitutional ratio as a function of growth conditions is required to optimize electrical activation of Zn and to control its diffusion in the device structures.
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U2 - 10.1016/j.commatsci.2004.12.028
DO - 10.1016/j.commatsci.2004.12.028
M3 - Conference article
AN - SCOPUS:14644405028
SN - 0927-0256
VL - 33
SP - 132
EP - 135
JO - Computational Materials Science
JF - Computational Materials Science
IS - 1-3
T2 - Proceedings of the E-MRS 2004 Spring Meeting: Symposium H: Atomic Materials Design: Modelling and Characterization
Y2 - 24 May 2004 through 28 May 2004
ER -