Crystalline gallium arsenide (GaAs) films have been grown by a laser-stimulated process on (100) GaAs substrates. Trimethylgallium (TMGa) and trimethylarsenic (TMAs) were photolyzed by an argon fluoride excimer laser to produce gas-phase species that diffuse to and stick on the surface to form GaAs. Ultraviolet absorption spectroscopy determined the relative absorption cross sections for TMGa and TMAs at 193 nm to be 2. 62 and 4. 46 multiplied by 10** minus **1**7 cm**2, respectively. Initial results showed the films to be polycrystalline due to the presence of carbon and oxygen at the film interface, as determined by Auger spectroscopy. The deposited films are also characterized by stoichometry and crystallinity by sputter Auger and Rutherford backscattering spectroscopies. Recently, time-resolved mass spectrometric studies reveal that other photoproduces besides atomic gallium and arsenic are created during the laser pulse and may play an important role in the deposition process. In particular, AsCH//3 and AsCH have been identified as photoproducts from the photolysis of TMAs. These studies also show that ethane, problably from the recombination of methyl radicals, is also produced during the laser pulse.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Publisher||Optical Soc of America|
|Number of pages||1|
|State||Published - Jan 1 1987|
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