Artificial dielectrics: Nonlinear optical properties of silicon nanoclusters at λ=532 nm

S. Vijayalakshmi; F. Shen; H. Grebel

doi:10.1063/1.120328

Artificial dielectrics: Nonlinear optical properties of silicon nanoclusters at λ=532 nm

S. Vijayalakshmi, F. Shen, H. Grebel

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Abstract

The nonlinear optical responses of laser-ablated Si nanoclusters were measured at λ=532 nm. Re{χ⁽³⁾} values as high as -(1.33±0.33) × 10^-3 esu were measured for films that were only 200 nm thick. The response time for this nonlinearity was as short as 3.5±0.5 ns, limited by our laser pulse duration.

Original language	English (US)
Pages (from-to)	3332-3334
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	23
DOIs	https://doi.org/10.1063/1.120328
State	Published - Dec 8 1997

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.120328

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@article{184cbbb8d1fe4199beb125b7d7799c2a,

title = "Artificial dielectrics: Nonlinear optical properties of silicon nanoclusters at λ=532 nm",

abstract = "The nonlinear optical responses of laser-ablated Si nanoclusters were measured at λ=532 nm. Re{χ(3)} values as high as -(1.33±0.33) × 10-3 esu were measured for films that were only 200 nm thick. The response time for this nonlinearity was as short as 3.5±0.5 ns, limited by our laser pulse duration.",

author = "S. Vijayalakshmi and F. Shen and H. Grebel",

year = "1997",

month = dec,

day = "8",

doi = "10.1063/1.120328",

language = "English (US)",

volume = "71",

pages = "3332--3334",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Artificial dielectrics

T2 - Nonlinear optical properties of silicon nanoclusters at λ=532 nm

AU - Vijayalakshmi, S.

AU - Shen, F.

AU - Grebel, H.

PY - 1997/12/8

Y1 - 1997/12/8

N2 - The nonlinear optical responses of laser-ablated Si nanoclusters were measured at λ=532 nm. Re{χ(3)} values as high as -(1.33±0.33) × 10-3 esu were measured for films that were only 200 nm thick. The response time for this nonlinearity was as short as 3.5±0.5 ns, limited by our laser pulse duration.

AB - The nonlinear optical responses of laser-ablated Si nanoclusters were measured at λ=532 nm. Re{χ(3)} values as high as -(1.33±0.33) × 10-3 esu were measured for films that were only 200 nm thick. The response time for this nonlinearity was as short as 3.5±0.5 ns, limited by our laser pulse duration.

UR - http://www.scopus.com/inward/record.url?scp=0012831203&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012831203&partnerID=8YFLogxK

U2 - 10.1063/1.120328

DO - 10.1063/1.120328

M3 - Article

AN - SCOPUS:0012831203

SN - 0003-6951

VL - 71

SP - 3332

EP - 3334

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Artificial dielectrics: Nonlinear optical properties of silicon nanoclusters at λ=532 nm

Abstract

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