Artificial dielectrics: Nonlinear optical properties of silicon nanoclusters at λ=532 nm

S. Vijayalakshmi; F. Shen; H. Grebel

doi:10.1063/1.120328

Artificial dielectrics: Nonlinear optical properties of silicon nanoclusters at λ=532 nm

S. Vijayalakshmi
, F. Shen
, H. Grebel

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

The nonlinear optical responses of laser-ablated Si nanoclusters were measured at λ=532 nm. Re{χ⁽³⁾} values as high as -(1.33±0.33) × 10^-3 esu were measured for films that were only 200 nm thick. The response time for this nonlinearity was as short as 3.5±0.5 ns, limited by our laser pulse duration.

Original language	English (US)
Pages (from-to)	3332-3334
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	23
DOIs	https://doi.org/10.1063/1.120328
State	Published - Dec 8 1997

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.120328

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title = "Artificial dielectrics: Nonlinear optical properties of silicon nanoclusters at λ=532 nm",

abstract = "The nonlinear optical responses of laser-ablated Si nanoclusters were measured at λ=532 nm. Re\{χ(3)\} values as high as -(1.33±0.33) × 10-3 esu were measured for films that were only 200 nm thick. The response time for this nonlinearity was as short as 3.5±0.5 ns, limited by our laser pulse duration.",

author = "S. Vijayalakshmi and F. Shen and H. Grebel",

year = "1997",

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language = "English (US)",

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AU - Grebel, H.

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Y1 - 1997/12/8

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AB - The nonlinear optical responses of laser-ablated Si nanoclusters were measured at λ=532 nm. Re{χ(3)} values as high as -(1.33±0.33) × 10-3 esu were measured for films that were only 200 nm thick. The response time for this nonlinearity was as short as 3.5±0.5 ns, limited by our laser pulse duration.

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Artificial dielectrics: Nonlinear optical properties of silicon nanoclusters at λ=532 nm

Abstract

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