Artificial dielectrics: Nonlinear properties of Si nanoclusters formed by ion implantation in SiO2 glassy matrix

S. Vijayalakshmi, H. Grebel, Z. Iqbal, C. W. White

Research output: Contribution to journalArticlepeer-review

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Abstract

The nonlinear optical properties of Si nanoclusters formed by ion implantation into an SiO2 glassy matrix and followed by annealing have been studied at λ = 532 nm and λ = 355 nm by use of Z-scan and pump-probe techniques. These have been compared to the nonlinear properties of laser-ablated Si films. At relatively large intensities (>1 MW/cm2), the absolute nonlinear values for these isolated nanoclusters were comparable to those obtained for laser-ablated samples although opposite in sign. Laser-ablated samples showed a much larger effect at relatively low intensities (<1 MW/cm2), while the ion-implanted films showed almost none. Lifetime constants were in the range of 3-5 ns for all samples.

Original languageEnglish (US)
Pages (from-to)6502-6506
Number of pages5
JournalJournal of Applied Physics
Volume84
Issue number12
DOIs
StatePublished - Dec 15 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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