ASIC for SDD-based X-ray spectrometers

Gianluigi De Geronimo, Pavel Rehak, Kim Ackley, Gabriella Carini, Wei Chen, Jack Fried, Jeffrey Keister, Shaorui Li, Zheng Li, Donald A. Pinelli, D. Peter Siddons, Emerson Vernon, Jessica A. Gaskin, Brian D. Ramsey, Trevor A. Tyson

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm2 and dissipates with the sensor biased about 15 mW/cm2 . As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements at -44°C show a FWHM of 145 eV at the 5.9 keV peak of a 55Fe source, and less than 80 eV on a test-pulse line at 200 eV.

Original languageEnglish (US)
Article number5485169
Pages (from-to)1654-1663
Number of pages10
JournalIEEE Transactions on Nuclear Science
Issue number3 PART 3
StatePublished - Jun 2010

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


  • ASIC
  • Charge sharing
  • High rate
  • LVDS
  • PUR
  • SDD


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