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ASIC for SDD-based X-ray spectrometers

  • Gianluigi De Geronimo
  • , Pavel Rehak
  • , Kim Ackley
  • , Gabriella Carini
  • , Wei Chen
  • , Jack Fried
  • , Jeffrey Keister
  • , Shaorui Li
  • , Zheng Li
  • , Donald A. Pinelli
  • , D. Peter Siddons
  • , Emerson Vernon
  • , Jessica A. Gaskin
  • , Brian D. Ramsey
  • , Trevor A. Tyson

Research output: Contribution to journalArticlepeer-review

Abstract

We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm2 and dissipates with the sensor biased about 15 mW/cm2 . As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements at -44°C show a FWHM of 145 eV at the 5.9 keV peak of a 55Fe source, and less than 80 eV on a test-pulse line at 200 eV.

Original languageEnglish (US)
Article number5485169
Pages (from-to)1654-1663
Number of pages10
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number3 PART 3
DOIs
StatePublished - Jun 2010

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Keywords

  • ASIC
  • Charge sharing
  • High rate
  • LVDS
  • PUR
  • SDD

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