Atomic force microscopy and raman spectroscopy of nanoscale Si/SiO2 superlattices

R. Krishnan; G. F. Grom; P. M. Fauchet; L. Tsybeskov; S. Papernov; G. I. Sproule; D. J. Lockwood

Atomic force microscopy and raman spectroscopy of nanoscale Si/SiO₂ superlattices

R. Krishnan, G. F. Grom, P. M. Fauchet, L. Tsybeskov, S. Papernov, G. I. Sproule, D. J. Lockwood

Research output: Contribution to journal › Conference article › peer-review

Abstract

An atomic force microscope (AFM) has been used to optimize the radio frequency (rf) / radio frequency magnetron sputtering deposition conditions for obtaining atomically smooth, hydrogen free amorphous silicon (a-Si) and silicon dioxide (a-SiO₂) thin films. Superlattices composed of periodically repeating units of nanoscale (a-Si/a-SiO₂) units were fabricated at these optimized conditions and subsequently crystallized. The amorphous and crystallized superlattices were characterized by AFM and Raman spectroscopy. Raman spectroscopy of the superlattices was performed by enhancing the weak scattered signal and eliminating the silicon substrate signal by using either waveguiding, cross polarization or interferometric enhancement techniques. The enhanced Raman spectrum clearly indicates formation of nanocrystals after crystallization.

Original language	English (US)
Pages (from-to)	F541-F546
Journal	Materials Research Society Symposium - Proceedings
Volume	638
State	Published - 2001
Externally published	Yes
Event	Microcrystalline and Nanocrystalline Semiconductors 2000 - Boston, MA, United States Duration: Nov 27 2000 → Nov 30 2000

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{b97b4175fdf44923a5de41cbe3a010ab,

title = "Atomic force microscopy and raman spectroscopy of nanoscale Si/SiO2 superlattices",

abstract = "An atomic force microscope (AFM) has been used to optimize the radio frequency (rf) / radio frequency magnetron sputtering deposition conditions for obtaining atomically smooth, hydrogen free amorphous silicon (a-Si) and silicon dioxide (a-SiO2) thin films. Superlattices composed of periodically repeating units of nanoscale (a-Si/a-SiO2) units were fabricated at these optimized conditions and subsequently crystallized. The amorphous and crystallized superlattices were characterized by AFM and Raman spectroscopy. Raman spectroscopy of the superlattices was performed by enhancing the weak scattered signal and eliminating the silicon substrate signal by using either waveguiding, cross polarization or interferometric enhancement techniques. The enhanced Raman spectrum clearly indicates formation of nanocrystals after crystallization.",

author = "R. Krishnan and Grom, {G. F.} and Fauchet, {P. M.} and L. Tsybeskov and S. Papernov and Sproule, {G. I.} and Lockwood, {D. J.}",

note = "Funding Information: The authors thank the U.S Army Research Office, National Science Foundation, Semiconductor Research Corporation, and Motorola for sponsoring this research. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Microcrystalline and Nanocrystalline Semiconductors 2000 ; Conference date: 27-11-2000 Through 30-11-2000",

year = "2001",

language = "English (US)",

volume = "638",

pages = "F541--F546",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Atomic force microscopy and raman spectroscopy of nanoscale Si/SiO2 superlattices

AU - Krishnan, R.

AU - Grom, G. F.

AU - Fauchet, P. M.

AU - Tsybeskov, L.

AU - Papernov, S.

AU - Sproule, G. I.

AU - Lockwood, D. J.

N1 - Funding Information: The authors thank the U.S Army Research Office, National Science Foundation, Semiconductor Research Corporation, and Motorola for sponsoring this research. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

PY - 2001

Y1 - 2001

N2 - An atomic force microscope (AFM) has been used to optimize the radio frequency (rf) / radio frequency magnetron sputtering deposition conditions for obtaining atomically smooth, hydrogen free amorphous silicon (a-Si) and silicon dioxide (a-SiO2) thin films. Superlattices composed of periodically repeating units of nanoscale (a-Si/a-SiO2) units were fabricated at these optimized conditions and subsequently crystallized. The amorphous and crystallized superlattices were characterized by AFM and Raman spectroscopy. Raman spectroscopy of the superlattices was performed by enhancing the weak scattered signal and eliminating the silicon substrate signal by using either waveguiding, cross polarization or interferometric enhancement techniques. The enhanced Raman spectrum clearly indicates formation of nanocrystals after crystallization.

AB - An atomic force microscope (AFM) has been used to optimize the radio frequency (rf) / radio frequency magnetron sputtering deposition conditions for obtaining atomically smooth, hydrogen free amorphous silicon (a-Si) and silicon dioxide (a-SiO2) thin films. Superlattices composed of periodically repeating units of nanoscale (a-Si/a-SiO2) units were fabricated at these optimized conditions and subsequently crystallized. The amorphous and crystallized superlattices were characterized by AFM and Raman spectroscopy. Raman spectroscopy of the superlattices was performed by enhancing the weak scattered signal and eliminating the silicon substrate signal by using either waveguiding, cross polarization or interferometric enhancement techniques. The enhanced Raman spectrum clearly indicates formation of nanocrystals after crystallization.

UR - http://www.scopus.com/inward/record.url?scp=0035557418&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035557418&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035557418

SN - 0272-9172

VL - 638

SP - F541-F546

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Microcrystalline and Nanocrystalline Semiconductors 2000

Y2 - 27 November 2000 through 30 November 2000

ER -

Atomic force microscopy and raman spectroscopy of nanoscale Si/SiO₂ superlattices

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this