Axial GaN Nanowire-Based LEDs

Current solid state lamps rely on the use of blue light-emitting diodes (LEDs) and the generation of green/red light by phosphor-based down-conversion process. The aim of this chapter is to provide an overview of the recent development of axial GaN nanowire (NW) - based LEDs. It describes the fabrication and performance characteristics of NW LEDs using the top-down approach. The chapter presents the design, epitaxial growth and performance of typical bottom-up NW LEDs. It also presents various carrier loss processes, including Auger recombination, electron overflow/leakage and surface recombination and their impact on the performance of NW LEDs. The chapter also describes the design and performance characteristics of NW LEDs with the incorporation of p-type modulation doping, electron blocking layer (EBL) and surface passivation techniques. NW LEDs fabricated by the bottom-up approach have been intensively investigated.