Axial GaN Nanowire-Based LEDs

Qi Wang, Hieu N'Guyen, Songrui Zhao, Zetian Mi

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Current solid state lamps rely on the use of blue light-emitting diodes (LEDs) and the generation of green/red light by phosphor-based down-conversion process. The aim of this chapter is to provide an overview of the recent development of axial GaN nanowire (NW) - based LEDs. It describes the fabrication and performance characteristics of NW LEDs using the top-down approach. The chapter presents the design, epitaxial growth and performance of typical bottom-up NW LEDs. It also presents various carrier loss processes, including Auger recombination, electron overflow/leakage and surface recombination and their impact on the performance of NW LEDs. The chapter also describes the design and performance characteristics of NW LEDs with the incorporation of p-type modulation doping, electron blocking layer (EBL) and surface passivation techniques. NW LEDs fabricated by the bottom-up approach have been intensively investigated.

Original languageEnglish (US)
Title of host publicationWide Band Gap Semiconductor Nanowires 2
Subtitle of host publicationHeterostructures and Optoelectronic Devices
PublisherWiley-Blackwell
Pages105-134
Number of pages30
Volume9781848216877
ISBN (Electronic)9781118984291
ISBN (Print)9781848216877
DOIs
StatePublished - Sep 15 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Keywords

  • Axial GaN
  • Bottom-up approach
  • Carrier loss processes
  • Electron blocking layer (EBL)
  • Light-emitting diodes (LEDs)
  • Nanowire (NW)
  • Top-down approach

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