Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport

X. Wang, L. Tsybeskov, T. I. Kamins, X. Wu, D. J. Lockwood

Research output: Contribution to journalArticlepeer-review

Abstract

We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20-30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.

Original languageEnglish (US)
Article number205107
JournalJournal of Applied Physics
Volume125
Issue number20
DOIs
StatePublished - May 28 2019

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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