Abstract
We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20-30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.
Original language | English (US) |
---|---|
Article number | 205107 |
Journal | Journal of Applied Physics |
Volume | 125 |
Issue number | 20 |
DOIs | |
State | Published - May 28 2019 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy