Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport

X. Wang; L. Tsybeskov; T. I. Kamins; X. Wu; D. J. Lockwood

doi:10.1063/1.5091934

Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport

X. Wang
, L. Tsybeskov
, T. I. Kamins
, X. Wu
, D. J. Lockwood

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20-30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.

Original language	English (US)
Article number	205107
Journal	Journal of Applied Physics
Volume	125
Issue number	20
DOIs	https://doi.org/10.1063/1.5091934
State	Published - May 28 2019

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.5091934

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title = "Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport",

abstract = "We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20-30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.",

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T2 - Structural properties and carrier transport

AU - Wang, X.

AU - Tsybeskov, L.

AU - Kamins, T. I.

AU - Wu, X.

AU - Lockwood, D. J.

PY - 2019/5/28

Y1 - 2019/5/28

N2 - We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20-30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.

AB - We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20-30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.

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Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport

Abstract

All Science Journal Classification (ASJC) codes

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