Bandgap bowing in BGaN thin films

A. Ougazzaden; S. Gautier; T. Moudakir; Z. Djebbour; Z. Lochner; S. Choi; H. J. Kim; J. H. Ryou; R. D. Dupuis; A. A. Sirenko

doi:10.1063/1.2977588

Bandgap bowing in BGaN thin films

A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. J. Kim, J. H. Ryou, R. D. Dupuis, A. A. Sirenko

Physics

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56 Scopus citations

Abstract

We report on the bandgap variation in thin films of Bx Ga1-x N grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials' properties of the Bx Ga1-x N films. In contrast to the common expectation for the bandgap variation, which is based on the linear interpolation between the corresponding GaN and BN values, a significant bowing (C=9.2±0.5 eV) of the bandgap was observed. A decrease in the optical bandgap by 150 meV with respect to that of GaN was measured for the increase in the boron composition from 0% to 1.8%.

Original language	English (US)
Article number	083118
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2977588
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Bandgap bowing in BGaN thin films",

abstract = "We report on the bandgap variation in thin films of Bx Ga1-x N grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials' properties of the Bx Ga1-x N films. In contrast to the common expectation for the bandgap variation, which is based on the linear interpolation between the corresponding GaN and BN values, a significant bowing (C=9.2±0.5 eV) of the bandgap was observed. A decrease in the optical bandgap by 150 meV with respect to that of GaN was measured for the increase in the boron composition from 0% to 1.8%.",

author = "A. Ougazzaden and S. Gautier and T. Moudakir and Z. Djebbour and Z. Lochner and S. Choi and Kim, {H. J.} and Ryou, {J. H.} and Dupuis, {R. D.} and Sirenko, {A. A.}",

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language = "English (US)",

volume = "93",

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T1 - Bandgap bowing in BGaN thin films

AU - Ougazzaden, A.

AU - Gautier, S.

AU - Moudakir, T.

AU - Djebbour, Z.

AU - Lochner, Z.

AU - Choi, S.

AU - Kim, H. J.

AU - Ryou, J. H.

AU - Dupuis, R. D.

AU - Sirenko, A. A.

PY - 2008

Y1 - 2008

N2 - We report on the bandgap variation in thin films of Bx Ga1-x N grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials' properties of the Bx Ga1-x N films. In contrast to the common expectation for the bandgap variation, which is based on the linear interpolation between the corresponding GaN and BN values, a significant bowing (C=9.2±0.5 eV) of the bandgap was observed. A decrease in the optical bandgap by 150 meV with respect to that of GaN was measured for the increase in the boron composition from 0% to 1.8%.

AB - We report on the bandgap variation in thin films of Bx Ga1-x N grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials' properties of the Bx Ga1-x N films. In contrast to the common expectation for the bandgap variation, which is based on the linear interpolation between the corresponding GaN and BN values, a significant bowing (C=9.2±0.5 eV) of the bandgap was observed. A decrease in the optical bandgap by 150 meV with respect to that of GaN was measured for the increase in the boron composition from 0% to 1.8%.

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JF - Applied Physics Letters

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Bandgap bowing in BGaN thin films

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