Bandgap bowing in BGaN thin films

A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. J. Kim, J. H. Ryou, R. D. Dupuis, A. A. Sirenko

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Abstract

We report on the bandgap variation in thin films of Bx Ga1-x N grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials' properties of the Bx Ga1-x N films. In contrast to the common expectation for the bandgap variation, which is based on the linear interpolation between the corresponding GaN and BN values, a significant bowing (C=9.2±0.5 eV) of the bandgap was observed. A decrease in the optical bandgap by 150 meV with respect to that of GaN was measured for the increase in the boron composition from 0% to 1.8%.

Original languageEnglish (US)
Article number083118
JournalApplied Physics Letters
Volume93
Issue number8
DOIs
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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