Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response

Sudhakar Shet, Kwang Soon Ahn, N. Ravindra, Yanfa Yan, Todd Deutsch, John Turner, M. Al-Jassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

ZnO thin films are deposited in pure Ar and mixed Ar and N2 gas ambient at substrate temperature of 500°C by radio-frequency sputtering ZnO targets. All the films were deposited on fluorine-doped tin-oxide-coated glass. We find that the presence of an optimum N2-to-Ar ratio in the deposition ambient promotes the formation of well-aligned ZnO nanorods. ZnO thin films grown at 25% N2 gas flow rate promoted aligned nanorods along c-axis and exhibit significantly enhanced photoelectrochemical response, as compared to ZnO thin films grown at other N2-to-Ar gas flow ratios. Our results suggest that chamber ambient is very important for forming aligned nanostructures, which offer potential advantages for improving the efficiency of photoelectrochemical water splitting for H2 production.

Original languageEnglish (US)
Title of host publicationMaterials Science and Technology Conference and Exhibition 2009, MS and T'09
Pages219-228
Number of pages10
StatePublished - Dec 1 2009
EventMaterials Science and Technology Conference and Exhibition 2009, MS and T'09 - Pittsburgh, PA, United States
Duration: Oct 25 2009Oct 29 2009

Publication series

NameMaterials Science and Technology Conference and Exhibition 2009, MS and T'09
Volume1

Other

OtherMaterials Science and Technology Conference and Exhibition 2009, MS and T'09
CountryUnited States
CityPittsburgh, PA
Period10/25/0910/29/09

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Keywords

  • Bandgap reduction
  • Co-doping
  • Cu incorporation
  • F-doped tin oxide
  • Post-deposition annealing
  • Sputtering
  • p-type ZnO

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