Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response

Sudhakar Shet; Kwang Soon Ahn; N. M. Ravindra; Yanfa Yan; Todd Deutsch; John Turner; M. Al-Jassim

Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response

Sudhakar Shet, Kwang Soon Ahn, N. M. Ravindra, Yanfa Yan, Todd Deutsch, John Turner, M. Al-Jassim

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

ZnO thin films are deposited in pure Ar and mixed Ar and N₂ gas ambient at substrate temperature of 500°C by radio-frequency sputtering ZnO targets. All the films were deposited on fluorine-doped tin-oxide-coated glass. We find that the presence of an optimum N₂-to-Ar ratio in the deposition ambient promotes the formation of well-aligned ZnO nanorods. ZnO thin films grown at 25% N₂ gas flow rate promoted aligned nanorods along c-axis and exhibit significantly enhanced photoelectrochemical response, as compared to ZnO thin films grown at other N₂-to-Ar gas flow ratios. Our results suggest that chamber ambient is very important for forming aligned nanostructures, which offer potential advantages for improving the efficiency of photoelectrochemical water splitting for H₂ production.

Original language	English (US)
Title of host publication	Materials Science and Technology Conference and Exhibition 2009, MS and T'09
Pages	219-228
Number of pages	10
State	Published - 2009
Event	Materials Science and Technology Conference and Exhibition 2009, MS and T'09 - Pittsburgh, PA, United States Duration: Oct 25 2009 → Oct 29 2009

Publication series

Name	Materials Science and Technology Conference and Exhibition 2009, MS and T'09
Volume	1

Other

Other	Materials Science and Technology Conference and Exhibition 2009, MS and T'09
Country/Territory	United States
City	Pittsburgh, PA
Period	10/25/09 → 10/29/09

All Science Journal Classification (ASJC) codes

General Materials Science

Keywords

Bandgap reduction
Co-doping
Cu incorporation
F-doped tin oxide
Post-deposition annealing
Sputtering
p-type ZnO

Cite this

Shet, S., Ahn, K. S., Ravindra, N. M., Yan, Y., Deutsch, T., Turner, J., & Al-Jassim, M. (2009). Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response. In Materials Science and Technology Conference and Exhibition 2009, MS and T'09 (pp. 219-228). (Materials Science and Technology Conference and Exhibition 2009, MS and T'09; Vol. 1).

@inproceedings{487350436c024cec91499e4d095a7ed4,

title = "Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response",

abstract = "ZnO thin films are deposited in pure Ar and mixed Ar and N2 gas ambient at substrate temperature of 500°C by radio-frequency sputtering ZnO targets. All the films were deposited on fluorine-doped tin-oxide-coated glass. We find that the presence of an optimum N2-to-Ar ratio in the deposition ambient promotes the formation of well-aligned ZnO nanorods. ZnO thin films grown at 25% N2 gas flow rate promoted aligned nanorods along c-axis and exhibit significantly enhanced photoelectrochemical response, as compared to ZnO thin films grown at other N2-to-Ar gas flow ratios. Our results suggest that chamber ambient is very important for forming aligned nanostructures, which offer potential advantages for improving the efficiency of photoelectrochemical water splitting for H2 production.",

keywords = "Bandgap reduction, Co-doping, Cu incorporation, F-doped tin oxide, Post-deposition annealing, Sputtering, p-type ZnO",

author = "Sudhakar Shet and Ahn, {Kwang Soon} and Ravindra, {N. M.} and Yanfa Yan and Todd Deutsch and John Turner and M. Al-Jassim",

year = "2009",

language = "English (US)",

isbn = "9781615676361",

series = "Materials Science and Technology Conference and Exhibition 2009, MS and T'09",

pages = "219--228",

booktitle = "Materials Science and Technology Conference and Exhibition 2009, MS and T'09",

note = "Materials Science and Technology Conference and Exhibition 2009, MS and T'09 ; Conference date: 25-10-2009 Through 29-10-2009",

}

Shet, S, Ahn, KS, Ravindra, NM, Yan, Y, Deutsch, T, Turner, J & Al-Jassim, M 2009, Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response. in Materials Science and Technology Conference and Exhibition 2009, MS and T'09. Materials Science and Technology Conference and Exhibition 2009, MS and T'09, vol. 1, pp. 219-228, Materials Science and Technology Conference and Exhibition 2009, MS and T'09, Pittsburgh, PA, United States, 10/25/09.

Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response. / Shet, Sudhakar; Ahn, Kwang Soon; Ravindra, N. M. et al.
Materials Science and Technology Conference and Exhibition 2009, MS and T'09. 2009. p. 219-228 (Materials Science and Technology Conference and Exhibition 2009, MS and T'09; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response

AU - Shet, Sudhakar

AU - Ahn, Kwang Soon

AU - Ravindra, N. M.

AU - Yan, Yanfa

AU - Deutsch, Todd

AU - Turner, John

AU - Al-Jassim, M.

PY - 2009

Y1 - 2009

N2 - ZnO thin films are deposited in pure Ar and mixed Ar and N2 gas ambient at substrate temperature of 500°C by radio-frequency sputtering ZnO targets. All the films were deposited on fluorine-doped tin-oxide-coated glass. We find that the presence of an optimum N2-to-Ar ratio in the deposition ambient promotes the formation of well-aligned ZnO nanorods. ZnO thin films grown at 25% N2 gas flow rate promoted aligned nanorods along c-axis and exhibit significantly enhanced photoelectrochemical response, as compared to ZnO thin films grown at other N2-to-Ar gas flow ratios. Our results suggest that chamber ambient is very important for forming aligned nanostructures, which offer potential advantages for improving the efficiency of photoelectrochemical water splitting for H2 production.

AB - ZnO thin films are deposited in pure Ar and mixed Ar and N2 gas ambient at substrate temperature of 500°C by radio-frequency sputtering ZnO targets. All the films were deposited on fluorine-doped tin-oxide-coated glass. We find that the presence of an optimum N2-to-Ar ratio in the deposition ambient promotes the formation of well-aligned ZnO nanorods. ZnO thin films grown at 25% N2 gas flow rate promoted aligned nanorods along c-axis and exhibit significantly enhanced photoelectrochemical response, as compared to ZnO thin films grown at other N2-to-Ar gas flow ratios. Our results suggest that chamber ambient is very important for forming aligned nanostructures, which offer potential advantages for improving the efficiency of photoelectrochemical water splitting for H2 production.

KW - Bandgap reduction

KW - Co-doping

KW - Cu incorporation

KW - F-doped tin oxide

KW - Post-deposition annealing

KW - Sputtering

KW - p-type ZnO

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M3 - Conference contribution

AN - SCOPUS:77649091183

SN - 9781615676361

T3 - Materials Science and Technology Conference and Exhibition 2009, MS and T'09

SP - 219

EP - 228

BT - Materials Science and Technology Conference and Exhibition 2009, MS and T'09

T2 - Materials Science and Technology Conference and Exhibition 2009, MS and T'09

Y2 - 25 October 2009 through 29 October 2009

ER -

Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response

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