@inproceedings{392c3b98c03f4bd7bc27f5c046b87dc6,
title = "Bandgap reduction and photoelectrochemical properties of ZnO:N films deposited by reactive RF magnetron sputtering",
abstract = "ZnO:N films were deposited by reactive RF magnetron sputtering in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-grown and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total currents than pure ZnO thin films. With combined ultraviolet/infrared and color filtering, our data indicate that the main contribution to the high photocurrent is from the absorption of light in long-wavelength regions. Our results demonstrate that N incorporation in ZnO can narrow the bandgap and create absorption in the visible-light region for ZnO films, suggesting that N incorporation could be a potential method to improve the efficiency of PEC water splitting using ZnO-based materials.",
keywords = "Bandgap, Crystallinity, Gas ambient, Photoelectrochemical, RF power, Sputter, Visible light, ZnO",
author = "Ahn, {Kwang Soon} and Sudhakar Shet and Todd Deutsch and Yanfa Yan and John Turner and Ravindra, {N. M.} and M. Al-Jassim",
year = "2008",
language = "English (US)",
isbn = "9781605606217",
series = "Materials Science and Technology Conference and Exhibition, MS and T'08",
pages = "952--961",
booktitle = "Materials Science and Technology Conference and Exhibition MS and T'08",
note = "Materials Science and Technology Conference and Exhibition, MS and T'08 ; Conference date: 05-10-2008 Through 09-10-2008",
}