Bandgap reduction and photoelectrochemical properties of ZnO:N films deposited by reactive RF magnetron sputtering

Kwang Soon Ahn, Sudhakar Shet, Todd Deutsch, Yanfa Yan, John Turner, N. Ravindra, M. Al-Jassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

ZnO:N films were deposited by reactive RF magnetron sputtering in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-grown and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total currents than pure ZnO thin films. With combined ultraviolet/infrared and color filtering, our data indicate that the main contribution to the high photocurrent is from the absorption of light in long-wavelength regions. Our results demonstrate that N incorporation in ZnO can narrow the bandgap and create absorption in the visible-light region for ZnO films, suggesting that N incorporation could be a potential method to improve the efficiency of PEC water splitting using ZnO-based materials.

Original languageEnglish (US)
Title of host publicationMaterials Science and Technology Conference and Exhibition MS and T'08
Pages952-961
Number of pages10
StatePublished - Dec 1 2008
EventMaterials Science and Technology Conference and Exhibition, MS and T'08 - Pittsburgh, PA, United States
Duration: Oct 5 2008Oct 9 2008

Publication series

NameMaterials Science and Technology Conference and Exhibition, MS and T'08
Volume2

Other

OtherMaterials Science and Technology Conference and Exhibition, MS and T'08
Country/TerritoryUnited States
CityPittsburgh, PA
Period10/5/0810/9/08

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials

Keywords

  • Bandgap
  • Crystallinity
  • Gas ambient
  • Photoelectrochemical
  • RF power
  • Sputter
  • Visible light
  • ZnO

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