Bandlike transport in strongly coupled and doped quantum dot solids: A route to high-performance thin-film electronics

Ji Hyuk Choi, Aaron T. Fafarman, Soong Ju Oh, Dong Kyun Ko, David K. Kim, Benjamin T. Diroll, Shin Muramoto, J. Greg Gillen, Christopher B. Murray, Cherie R. Kagan

Research output: Contribution to journalArticlepeer-review

281 Scopus citations

Abstract

We report bandlike transport in solution-deposited, CdSe QD thin-films with room temperature field-effect mobilities for electrons of 27 cm 2/(V s). A concomitant shift and broadening in the QD solid optical absorption compared to that of dispersed samples is consistent with electron delocalization and measured electron mobilities. Annealing indium contacts allows for thermal diffusion and doping of the QD thin-films, shifting the Fermi energy, filling traps, and providing access to the bands. Temperature-dependent measurements show bandlike transport to 220 K on a SiO 2 gate insulator that is extended to 140 K by reducing the interface trap density using an Al 2O 3/SiO 2 gate insulator. The use of compact ligands and doping provides a pathway to high performance, solution-deposited QD electronics and optoelectronics.

Original languageEnglish (US)
Pages (from-to)2631-2638
Number of pages8
JournalNano Letters
Volume12
Issue number5
DOIs
StatePublished - May 9 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • Quantum dots
  • band-transport
  • cadmium-selenide
  • doping
  • field-effect transistor
  • thermal diffusion
  • thiocyanate

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