Barrier Height Modification in Silicon Schottky (MIS) Solar Cells

Wayne A. Anderson, Jim K. Kim, Alan E. Delahoy

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

A study of experimental data on Cr-oxide-p-Si solar cells has led to a metal evaporation procedure which gives 0.50 V < Voc < 0.56 V. This voltage its independent of the method used in oxide formation when oxide thickness ranges from 10 to 30 Å. It is concluded that slow deposition of the Cr on an oxide interface leads to a lowered metal work function and thus an increased Voc. A high n-value and fixed charge in the oxide are not necessary to obtain a high Voc.

Original languageEnglish (US)
Pages (from-to)453-457
Number of pages5
JournalIEEE Transactions on Electron Devices
VolumeED-24
Issue number4
DOIs
StatePublished - Apr 1977

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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