A study of experimental data on Cr-oxide-p-Si solar cells has led to a metal evaporation procedure which gives 0.50 V < Voc < 0.56 V. This voltage its independent of the method used in oxide formation when oxide thickness ranges from 10 to 30 Å. It is concluded that slow deposition of the Cr on an oxide interface leads to a lowered metal work function and thus an increased Voc. A high n-value and fixed charge in the oxide are not necessary to obtain a high Voc.
|Original language||English (US)|
|Number of pages||5|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - Apr 1977|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering