Behavior of oxygen doped SiC thin films: An x-ray photoelectron spectroscopy study

Keyphrases

• Spectroscopy Studies 100%
• X-ray Photoelectron Spectroscopy 100%
• Carbide Thin Films 100%
• Si-doped 100%
• Oxygen-doped 100%
• Si Oxide 66%
• Phase Mixture 66%
• Carbides 66%
• Silicon Substrate 33%
• P-type 33%
• Silicon Carbide Film 33%
• Ion Implantation 33%
• Oxygen Content 33%
• Silica 33%
• SiOx 33%
• Infrared Spectroscopy 33%
• Surface Oxide 33%
• C-phase 33%
• Multiphase Materials 33%
• Thin-film Silicon 33%
• Silicon Carbide Surfaces 33%
• Si-C 33%
• Atomic Fraction 33%
• Complex Phase 33%
• Chemical Vapor Deposition 33%
• (100) Silicon 33%
• Atomic Oxygen 33%
• Oxygen Fraction 33%
• Silicon Carbide 33%
• Monocrystalline Silicon 33%
• Air Exposure 33%
• Near-surface Region 33%
• Spectroscopic Analysis 33%

Engineering

• Thin Films 100%
• Ray Photoelectron Spectroscopy 100%
• Phase Mixture 66%
• Chemical Vapor Deposition 33%
• Vapor Deposition 33%
• Silicon Substrate 33%
• Ion Implantation 33%
• Surface Oxide 33%
• Induced Surface 33%
• Formed Material 33%
• Complex Phase 33%
• Monocrystalline Silicon 33%
• Surface Region 33%
• Oxygen Content 33%

Material Science

• Film 100%
• Thin Films 100%
• Photoemission Spectroscopy 100%
• Carbide 100%
• Silicon 60%
• Silicon Carbide 60%
• Oxide Compound 40%
• Ion Implantation 20%
• Chemical Vapor Deposition 20%
• Oxide Surface 20%