Keyphrases
Microstructure
100%
CoSi2
100%
Polysilicon
100%
Work Function
100%
Polycrystalline Si
100%
Grain Size
25%
Oxides
12%
Boron
12%
Complementary Metal Oxide Semiconductor
12%
Annealing
12%
Annealing Temperature
12%
Si-SiO2 Interface
12%
Rutherford Backscattering
12%
Si Film
12%
Transmission Electron Microscopy
12%
Device Characteristics
12%
Interface Roughness
12%
Metal-oxide-semiconductor Devices
12%
Small Grain Size
12%
Close-enough
12%
Statistical Limit
12%
Activation Cycle
12%
Engineering
Polycrystalline
100%
Microstructure
100%
Polysilicon
100%
Limitations
25%
Implant
25%
Transmissions
12%
Cross Section
12%
Semiconductor Device
12%
Positive Value
12%
Metal Oxide Semiconductor
12%
Si Interface
12%
Silicon Metal
12%
Material Science
Silicon
100%
Grain Size
100%
Film
33%
Oxide Compound
33%
Transmission Electron Microscopy
33%
Boron
33%
Metal Oxide
33%
Semiconductor Device
33%
Oxide Semiconductor
33%