To implement low power and highly reliable resistive randomaccess memory (RRAM) devices, suitable multi-layer dielectric materials are required. This consists of a switching layer, the oxygen vacancy medium, to form the filament and an oxygen vacancy deficient layer, such as Al 2 O 3 to control the filament rupture. This work explores several different bilayer structures using different dielectrics, electrode materials and processing conditions to reduce power consumption during forming, set and reset operations and to enhance endurance with a large R off /R on value for RRAM application. Several transition metal dielectrics (HfAlO 2 or HfZrO 2 ) were used as the switching layer on a thin Al 2 O 3 . By comparing the forming voltage values, R off /R on values and both set and reset power consumption, optimized performance was derived.