@inproceedings{c8c6a8ba094a4ca2900d1ffddb00c0fa,
title = "Bilayer dielectrics for RRAM devices",
abstract = " To implement low power and highly reliable resistive randomaccess memory (RRAM) devices, suitable multi-layer dielectric materials are required. This consists of a switching layer, the oxygen vacancy medium, to form the filament and an oxygen vacancy deficient layer, such as Al 2 O 3 to control the filament rupture. This work explores several different bilayer structures using different dielectrics, electrode materials and processing conditions to reduce power consumption during forming, set and reset operations and to enhance endurance with a large R off /R on value for RRAM application. Several transition metal dielectrics (HfAlO 2 or HfZrO 2 ) were used as the switching layer on a thin Al 2 O 3 . By comparing the forming voltage values, R off /R on values and both set and reset power consumption, optimized performance was derived. ",
author = "D. Misra and S. Sultana and B. Jain and N. Bhat and K. Tapily and Clark, {R. D.} and S. Consiglio and Wajda, {C. S.} and Leusink, {G. J.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; Symposium on Semiconductors, Dielectrics, and Metal for Nanoelectronics 16 - AiMES 2018, ECS and SMEQ Joint International Meeting ; Conference date: 30-09-2018 Through 04-10-2018",
year = "2018",
doi = "10.1149/08602.0077ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "77--83",
editor = "Koji Kita and Durga Misra and {De Gendt}, Stefan and Shadi Dayeh",
booktitle = "ECS Transactions",
edition = "2",
}