Bilayer dielectrics for RRAM devices

D. Misra, S. Sultana, B. Jain, N. Bhat, K. Tapily, R. D. Clark, S. Consiglio, C. S. Wajda, G. J. Leusink

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

To implement low power and highly reliable resistive randomaccess memory (RRAM) devices, suitable multi-layer dielectric materials are required. This consists of a switching layer, the oxygen vacancy medium, to form the filament and an oxygen vacancy deficient layer, such as Al 2 O 3 to control the filament rupture. This work explores several different bilayer structures using different dielectrics, electrode materials and processing conditions to reduce power consumption during forming, set and reset operations and to enhance endurance with a large R off /R on value for RRAM application. Several transition metal dielectrics (HfAlO 2 or HfZrO 2 ) were used as the switching layer on a thin Al 2 O 3 . By comparing the forming voltage values, R off /R on values and both set and reset power consumption, optimized performance was derived.

Original languageEnglish (US)
Title of host publicationECS Transactions
EditorsKoji Kita, Durga Misra, Stefan De Gendt, Shadi Dayeh
PublisherElectrochemical Society Inc.
Pages77-83
Number of pages7
Edition2
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2018
EventSymposium on Semiconductors, Dielectrics, and Metal for Nanoelectronics 16 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: Sep 30 2018Oct 4 2018

Publication series

NameECS Transactions
Number2
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductors, Dielectrics, and Metal for Nanoelectronics 16 - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period9/30/1810/4/18

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Bilayer dielectrics for RRAM devices'. Together they form a unique fingerprint.

Cite this