Bilayer dielectrics for RRAM devices

Keyphrases

• Memory Device 100%
• Switching Layer 100%
• Oxygen Vacancy 100%
• Aluminum Oxide 100%
• Bilayer Dielectric 100%
• Energy Consumption Reduction 50%
• Performance Optimization 50%
• Low Power 50%
• Power Consumption 50%
• Electrode Materials 50%
• Electrode Fabrication 50%
• Highly Reliable 50%
• Metal-dielectric 50%
• Processing Conditions 50%
• Set Operations 50%
• Forming Operations 50%
• Memory Application 50%
• Bilayer Structure 50%
• HfZrO2 50%
• Multilayer Dielectric Material 50%
• Material Conditions 50%
• Reset Operation 50%
• Forming Voltage 50%
• Dielectric Electrode 50%

Material Science

• Dielectric Material 100%
• Al2O3 50%
• Oxygen Vacancy 50%
• Transition Metal 25%
• Multilayer 25%