Bit storage by 360° domain walls in ferromagnetic nanorings

Cyrill B. Muratov, Viatcheslav V. Osipov

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

We propose a theoretical design for a magnetic memory cell, based on thin-film ferromagnetic nanorings, that can efficiently store, record, and read out information. An information bit is represented by the polarity of a stable 360° domain wall introduced into the ring. Switching between the two magnetization states is done by a current applied to a wire passing through the ring, whereby the 360° domain wall splits into two charged 180° walls, which then move to the opposite extreme of the ring to recombine into a 360° wall of the opposite polarity.

Original languageEnglish (US)
Article number5170237
Pages (from-to)3207-3209
Number of pages3
JournalIEEE Transactions on Magnetics
Volume45
Issue number8
DOIs
StatePublished - Aug 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Current-induced switching
  • Ferromagnetic rings
  • Magnetoresistive random access memory (MRAM)
  • Micromagnetic modeling
  • Topological domain walls

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