Abstract
We propose a theoretical design for a magnetic memory cell, based on thin-film ferromagnetic nanorings, that can efficiently store, record, and read out information. An information bit is represented by the polarity of a stable 360° domain wall introduced into the ring. Switching between the two magnetization states is done by a current applied to a wire passing through the ring, whereby the 360° domain wall splits into two charged 180° walls, which then move to the opposite extreme of the ring to recombine into a 360° wall of the opposite polarity.
Original language | English (US) |
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Article number | 5170237 |
Pages (from-to) | 3207-3209 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 45 |
Issue number | 8 |
DOIs | |
State | Published - Aug 2009 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Keywords
- Current-induced switching
- Ferromagnetic rings
- Magnetoresistive random access memory (MRAM)
- Micromagnetic modeling
- Topological domain walls