Bound state energy and line width due to the resonant interaction between optical phonon and electronic transitions in degenerate silicon

M. Jouanne, M. A. Kanehisa, J. F. Morhange, N. M. Ravindra, M. Balkanski

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

For free carrier concentration larger than 1020 cm-3 donors or 1019 cm-3 acceptors, silicon is degenerate and electronic interconduction band or intervalence band transitions are possible for energies of the order of the optical phonon energy. Light scattering experiments show that the coupling of these two elementary excitations leads to a bound state broadened and shifted to lower energy. Analysis of the variation of the line width and the shift of the band as a function of the impurity concentration is presented. Results obtained on silicon heavily doped by ion implantation followed by laser annealing show even more pronounced shift related to band structure and phonon dispersion modifications due to the very high dopant concentration.

Original languageEnglish (US)
Pages (from-to)39-45
Number of pages7
JournalSolid State Electronics
Volume28
Issue number1-2
DOIs
StatePublished - 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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