Bound state energy and line width due to the resonant interaction between optical phonon and electronic transitions in degenerate silicon

Keyphrases

• Electronic Transitions 100%
• Resonant Interaction 100%
• Optical Phonons 100%
• Cm(III) 100%
• Bound State Energy 100%
• Low Energy 50%
• Banded Structure 50%
• Ion Implantation 50%
• Bound States 50%
• Laser Annealing 50%
• Doping Concentration 50%
• Heavily Doped 50%
• Impurity Concentration 50%
• Free Carrier Concentration 50%
• Phonon Energy 50%
• Intervalence Band Transitions 50%
• Structure Dispersion 50%
• Elementary Excitations 50%
• Phonon Dispersion 50%
• Light Scattering Experiment 50%

Engineering

• Energy Engineering 100%
• Optical Phonon 100%
• Bound State 100%
• Line Width 100%
• Carrier Concentration 33%
• Band Structure 33%
• Ion Implantation 33%
• Dopant Concentration 33%
• Phonon Dispersion 33%
• Band Transition 33%

Material Science

• Silicon 100%
• Linewidth 100%
• Carrier Concentration 33%
• Doping (Additives) 33%
• Ion Implantation 33%