Keyphrases
HfO2
100%
Gate Stack
100%
Breakdown Characteristics
100%
Interfacial Layer
66%
Highest Layer
33%
Breakdown Voltage
33%
Frequency Dependence
16%
Dielectric
16%
Strong Correlation
16%
Electron Traps
16%
N-channel
16%
High-k Gate Stack
16%
Time-dependent Dielectric Breakdown
16%
Constant Voltage Stress
16%
Stress Induced Leakage Current
16%
Atomic Layer Deposited
16%
High Layer Thickness
16%
Time to Breakdown
16%
MOS Devices
16%
Gate Bias
16%
Ramp Voltage Stress
16%
Leakage Current Reduction
16%
Critical Electric Field
16%
Charge Pump
16%
Hard Breakdown
16%
Soft Breakdown
16%
Gate Leakage Current
16%
High Thickness
16%
Weibull Plot
16%
Gate Leakage
16%
Engineering
Gate Stack
100%
Interfacial Layer
66%
Dielectrics
33%
Breakdown Voltage
33%
Electric Field
16%
Atomic Layer
16%
Layer Thickness
16%
Constant Voltage
16%
Stress Induced Leakage Current
16%
Gate Bias
16%
Critical Field
16%
Earth and Planetary Sciences
Dielectrics
100%
Electrical Fault
100%
Electric Field
50%