Breakdown characteristics of TiN/HfxZr1-xO2/Al2O3/Ge gate stacks

P. Shao; M. N. Bhuyian; Y. M. Ding; D. Misra

doi:10.1149/08001.0071ecst

Breakdown characteristics of TiN/Hf_xZr_1-xO₂/Al₂O₃/Ge gate stacks

P. Shao, M. N. Bhuyian, Y. M. Ding, D. Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This work evaluates the time dependent dielectric breakdown (TDDB) characteristics of TiN/Hf_xZr_1-xO₂/Al₂O₃/Ge gate stacks by changing the Zr content and with slot-plane antenna plasma oxidation (SPAO), performed immediately after the ALD deposition of the high-k layers. It was observed that the equivalent oxide thickness (EOT) decreases with Zr addition in HfO₂ with up to 75% of Zr incorporation. With 100% Zr incorporation EOT increased significantly. This is possibly due to the formation of low-k interfacial GeO₂ at the interface for 100% Zr whereas for other samples have comparatively thinner GeO_x interfacial layers. Weibull plots shows that charge to breakdown (Q_bd) increased with the percentage of Zr. However, the breakdown acceleration factor decreased with Zr percentage up to 75% and increased rapidly for 100% Zr content. It is, therefore, believed that GeOi increases the TDDB degradation.

Original language	English (US)
Title of host publication	ECS Transactions
Editors	Durga Misra, Stefan De Gendt, Michel Housa, Koji Kita, Dolf Landheer
Publisher	Electrochemical Society Inc.
Pages	71-77
Number of pages	7
Edition	1
ISBN (Electronic)	9781607688181
ISBN (Print)	9781623324704
DOIs	https://doi.org/10.1149/08001.0071ecst
State	Published - 2017
Event	15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, United States Duration: Oct 1 2017 → Oct 5 2017

Publication series

Name	ECS Transactions
Number	1
Volume	80
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
Country/Territory	United States
City	National Harbor
Period	10/1/17 → 10/5/17

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/08001.0071ecst

Cite this

@inproceedings{b47fb910385d4265863490c2ef63443d,

title = "Breakdown characteristics of TiN/HfxZr1-xO2/Al2O3/Ge gate stacks",

abstract = "This work evaluates the time dependent dielectric breakdown (TDDB) characteristics of TiN/HfxZr1-xO2/Al2O3/Ge gate stacks by changing the Zr content and with slot-plane antenna plasma oxidation (SPAO), performed immediately after the ALD deposition of the high-k layers. It was observed that the equivalent oxide thickness (EOT) decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. With 100% Zr incorporation EOT increased significantly. This is possibly due to the formation of low-k interfacial GeO2 at the interface for 100% Zr whereas for other samples have comparatively thinner GeOx interfacial layers. Weibull plots shows that charge to breakdown (Qbd) increased with the percentage of Zr. However, the breakdown acceleration factor decreased with Zr percentage up to 75% and increased rapidly for 100% Zr content. It is, therefore, believed that GeOi increases the TDDB degradation.",

author = "P. Shao and Bhuyian, {M. N.} and Ding, {Y. M.} and D. Misra",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",

year = "2017",

doi = "10.1149/08001.0071ecst",

language = "English (US)",

isbn = "9781623324704",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

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editor = "Durga Misra and {De Gendt}, Stefan and Michel Housa and Koji Kita and Dolf Landheer",

booktitle = "ECS Transactions",

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}

Shao, P, Bhuyian, MN, Ding, YM & Misra, D 2017, Breakdown characteristics of TiN/Hf_xZr_1-xO₂/Al₂O₃/Ge gate stacks. in D Misra, S De Gendt, M Housa, K Kita & D Landheer (eds), ECS Transactions. 1 edn, ECS Transactions, no. 1, vol. 80, Electrochemical Society Inc., pp. 71-77, 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting, National Harbor, United States, 10/1/17. https://doi.org/10.1149/08001.0071ecst

Breakdown characteristics of TiN/Hf_xZr_1-xO₂/Al₂O₃/Ge gate stacks. / Shao, P.; Bhuyian, M. N.; Ding, Y. M. et al.
ECS Transactions. ed. / Durga Misra; Stefan De Gendt; Michel Housa; Koji Kita; Dolf Landheer. 1. ed. Electrochemical Society Inc., 2017. p. 71-77 (ECS Transactions; Vol. 80, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Breakdown characteristics of TiN/HfxZr1-xO2/Al2O3/Ge gate stacks

AU - Shao, P.

AU - Bhuyian, M. N.

AU - Ding, Y. M.

AU - Misra, D.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2017

Y1 - 2017

N2 - This work evaluates the time dependent dielectric breakdown (TDDB) characteristics of TiN/HfxZr1-xO2/Al2O3/Ge gate stacks by changing the Zr content and with slot-plane antenna plasma oxidation (SPAO), performed immediately after the ALD deposition of the high-k layers. It was observed that the equivalent oxide thickness (EOT) decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. With 100% Zr incorporation EOT increased significantly. This is possibly due to the formation of low-k interfacial GeO2 at the interface for 100% Zr whereas for other samples have comparatively thinner GeOx interfacial layers. Weibull plots shows that charge to breakdown (Qbd) increased with the percentage of Zr. However, the breakdown acceleration factor decreased with Zr percentage up to 75% and increased rapidly for 100% Zr content. It is, therefore, believed that GeOi increases the TDDB degradation.

AB - This work evaluates the time dependent dielectric breakdown (TDDB) characteristics of TiN/HfxZr1-xO2/Al2O3/Ge gate stacks by changing the Zr content and with slot-plane antenna plasma oxidation (SPAO), performed immediately after the ALD deposition of the high-k layers. It was observed that the equivalent oxide thickness (EOT) decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. With 100% Zr incorporation EOT increased significantly. This is possibly due to the formation of low-k interfacial GeO2 at the interface for 100% Zr whereas for other samples have comparatively thinner GeOx interfacial layers. Weibull plots shows that charge to breakdown (Qbd) increased with the percentage of Zr. However, the breakdown acceleration factor decreased with Zr percentage up to 75% and increased rapidly for 100% Zr content. It is, therefore, believed that GeOi increases the TDDB degradation.

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A2 - Misra, Durga

A2 - De Gendt, Stefan

A2 - Housa, Michel

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PB - Electrochemical Society Inc.

T2 - 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting

Y2 - 1 October 2017 through 5 October 2017

ER -