Breakdown characteristics of TiN/HfxZr1-xO2/Al2O3/Ge gate stacks

P. Shao, M. N. Bhuyian, Y. M. Ding, Durgamadhab Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This work evaluates the time dependent dielectric breakdown (TDDB) characteristics of TiN/HfxZr1-xO2/Al2O3/Ge gate stacks by changing the Zr content and with slot-plane antenna plasma oxidation (SPAO), performed immediately after the ALD deposition of the high-k layers. It was observed that the equivalent oxide thickness (EOT) decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. With 100% Zr incorporation EOT increased significantly. This is possibly due to the formation of low-k interfacial GeO2 at the interface for 100% Zr whereas for other samples have comparatively thinner GeOx interfacial layers. Weibull plots shows that charge to breakdown (Qbd) increased with the percentage of Zr. However, the breakdown acceleration factor decreased with Zr percentage up to 75% and increased rapidly for 100% Zr content. It is, therefore, believed that GeOi increases the TDDB degradation.

Original languageEnglish (US)
Title of host publicationECS Transactions
EditorsDurga Misra, Stefan De Gendt, Michel Housa, Koji Kita, Dolf Landheer
PublisherElectrochemical Society Inc.
Pages71-77
Number of pages7
Volume80
Edition1
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2017
Event15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 1 2017Oct 5 2017

Other

Other15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period10/1/1710/5/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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