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Breakdown characteristics of TiN/Hf
x
Zr
1-x
O
2
/Al
2
O
3
/Ge gate stacks
P. Shao
, M. N. Bhuyian
, Y. M. Ding
,
D. Misra
Electrical and Computer Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
1
Scopus citations
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Dive into the research topics of 'Breakdown characteristics of TiN/Hf
x
Zr
1-x
O
2
/Al
2
O
3
/Ge gate stacks'. Together they form a unique fingerprint.
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Keyphrases
Gate Stack
100%
Breakdown Characteristics
100%
Aluminum Oxide
100%
Time-dependent Dielectric Breakdown
100%
CexZr1-xO2
100%
Equivalent Oxide Thickness
100%
Zr Content
100%
Zr Incorporation
100%
Antenna
50%
HfO2
50%
Interfacial Layer
50%
Plasma Oxidation
50%
GeOx
50%
GeO2
50%
Zr Addition
50%
Weibull Plot
50%
Charge to Breakdown
50%
ALD Deposition
50%
Acceleration Factor
50%
Engineering
Dielectrics
100%
Gate Stack
100%
Oxide Thickness
100%
Antenna
50%
Interfacial Layer
50%
Acceleration Factor
50%
Material Science
Oxide Compound
100%
Al2O3
100%
Electrical Breakdown
100%
Oxidation Reaction
50%
Physics
Electrical Breakdown
100%
Antenna
50%