Breakdown Characteristics Study of III-Nitride β-Ga2O3Nano-HEMT as a function of Field-Plate Length & AlN Nucleation Layer Thickness

G. Purnachandra Rao, Trupti Ranjan Lenka, Rajan Singh, Nour El I. Boukortt, Hieu Pham Trung Nguyen, Giovanni Crupi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Group III-nitride semiconductors such as (Al, Ga, In) N and their alloys have increasingly attracted the attention of worldwide researchers due to their unique material properties. AlGaN/GaN is the most widely proven material, allowing it to be employed in a number of nanoelectronics applications due to its significant high-power and high-frequency characteristics. High power density is achieved by AlGaN/GaN high electron mobility transistor (HEMT) with a significant critical breakdown field and the capacity to sustain a large channel current. However, one important consideration is that the AIGaN/GaN HEMT's breakdown voltage (BV) is significantly lower than the theoretical value. In this research work, the theoretical relationship between the BV of III-Nitride HEMT on β-Ga2O3 substrate, field-plate length, and AIN layer thickness has been investigated. The results show that the breakdown voltage of the proposed HEMT increases accordingly with AIN thickness, but it saturates gradually. Then, as the length of the field-plate increases, the breakdown voltage rises. As a result, the breakdown voltage of a device improves with the field-plate length and is limited by the AIN back-barrier layer thickness.

Original languageEnglish (US)
Title of host publication2022 IEEE Calcutta Conference, CALCON 2022 - Proceedings
EditorsSovan Dalai, Biswendu Chatterjee, Debangshu Dey, Susanta Ray
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781665462426
StatePublished - 2022
Event2022 IEEE Calcutta Conference, CALCON 2022 - Virtual, Online, India
Duration: Dec 10 2022Dec 11 2022

Publication series

Name2022 IEEE Calcutta Conference, CALCON 2022 - Proceedings


Conference2022 IEEE Calcutta Conference, CALCON 2022
CityVirtual, Online

All Science Journal Classification (ASJC) codes

  • Artificial Intelligence
  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Control and Optimization
  • Health Informatics
  • Instrumentation


  • AlN
  • GaN
  • III-nitride
  • breakdown
  • field-plate
  • β-GaO


Dive into the research topics of 'Breakdown Characteristics Study of III-Nitride β-Ga2O3Nano-HEMT as a function of Field-Plate Length & AlN Nucleation Layer Thickness'. Together they form a unique fingerprint.

Cite this