TY - GEN
T1 - Breakdown Characteristics Study of III-Nitride β-Ga2O3Nano-HEMT as a function of Field-Plate Length & AlN Nucleation Layer Thickness
AU - Rao, G. Purnachandra
AU - Lenka, Trupti Ranjan
AU - Singh, Rajan
AU - Boukortt, Nour El I.
AU - Trung Nguyen, Hieu Pham
AU - Crupi, Giovanni
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Group III-nitride semiconductors such as (Al, Ga, In) N and their alloys have increasingly attracted the attention of worldwide researchers due to their unique material properties. AlGaN/GaN is the most widely proven material, allowing it to be employed in a number of nanoelectronics applications due to its significant high-power and high-frequency characteristics. High power density is achieved by AlGaN/GaN high electron mobility transistor (HEMT) with a significant critical breakdown field and the capacity to sustain a large channel current. However, one important consideration is that the AIGaN/GaN HEMT's breakdown voltage (BV) is significantly lower than the theoretical value. In this research work, the theoretical relationship between the BV of III-Nitride HEMT on β-Ga2O3 substrate, field-plate length, and AIN layer thickness has been investigated. The results show that the breakdown voltage of the proposed HEMT increases accordingly with AIN thickness, but it saturates gradually. Then, as the length of the field-plate increases, the breakdown voltage rises. As a result, the breakdown voltage of a device improves with the field-plate length and is limited by the AIN back-barrier layer thickness.
AB - Group III-nitride semiconductors such as (Al, Ga, In) N and their alloys have increasingly attracted the attention of worldwide researchers due to their unique material properties. AlGaN/GaN is the most widely proven material, allowing it to be employed in a number of nanoelectronics applications due to its significant high-power and high-frequency characteristics. High power density is achieved by AlGaN/GaN high electron mobility transistor (HEMT) with a significant critical breakdown field and the capacity to sustain a large channel current. However, one important consideration is that the AIGaN/GaN HEMT's breakdown voltage (BV) is significantly lower than the theoretical value. In this research work, the theoretical relationship between the BV of III-Nitride HEMT on β-Ga2O3 substrate, field-plate length, and AIN layer thickness has been investigated. The results show that the breakdown voltage of the proposed HEMT increases accordingly with AIN thickness, but it saturates gradually. Then, as the length of the field-plate increases, the breakdown voltage rises. As a result, the breakdown voltage of a device improves with the field-plate length and is limited by the AIN back-barrier layer thickness.
KW - AlN
KW - GaN
KW - III-nitride
KW - breakdown
KW - field-plate
KW - β-GaO
UR - http://www.scopus.com/inward/record.url?scp=85150417440&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85150417440&partnerID=8YFLogxK
U2 - 10.1109/CALCON56258.2022.10060173
DO - 10.1109/CALCON56258.2022.10060173
M3 - Conference contribution
AN - SCOPUS:85150417440
T3 - 2022 IEEE Calcutta Conference, CALCON 2022 - Proceedings
SP - 30
EP - 33
BT - 2022 IEEE Calcutta Conference, CALCON 2022 - Proceedings
A2 - Dalai, Sovan
A2 - Chatterjee, Biswendu
A2 - Dey, Debangshu
A2 - Ray, Susanta
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Calcutta Conference, CALCON 2022
Y2 - 10 December 2022 through 11 December 2022
ER -