Keyphrases
Layer Thickness
100%
III-nitrides
100%
Breakdown Characteristics
100%
Breakdown Voltage
100%
Plate Length
100%
High Electron Mobility Transistor
100%
Field Plate
100%
AlN nucleation Layer
100%
AlGaN-GaN
40%
GaN HEMT
40%
Material Properties
20%
High Power
20%
Large Channel
20%
Breakdown Field
20%
High-frequency Characteristics
20%
Theoretical Relationship
20%
High Power Density
20%
Ga2O3
20%
Nanoelectronic Applications
20%
Channel Current
20%
Back-barrier Layer
20%
Barrier Layer Thickness
20%
Critical Breakdown
20%
Nitride Semiconductors
20%
Voltage Rise
20%
Material Science
Nucleation
100%
Nitride Compound
100%
Transistor
100%
Aluminum Nitride
100%
Electron Mobility
100%
Density
25%
Materials Property
25%
Nitride Semiconductor
25%
Engineering
Nitride
100%
Layer Thickness
100%
Breakdown Voltage
100%
Nanoelectronics
20%
Research Work
20%
Power Density
20%
Barrier Layer
20%
Saturates
20%
Frequency Characteristic
20%
Breakdown Field
20%
Theoretical Value
20%
Nitride Semiconductor
20%