Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes

Hieu Pham Trung Nguyen, Shaofei Zhang, Ashfiqua T. Connie, Md Golam Kibria, Qi Wang, Ishiang Shih, Zetian Mi

Research output: Contribution to journalArticlepeer-review

113 Scopus citations

Abstract

We have examined the carrier injection process of axial nanowire light-emitting diode (LED) structures and identified that poor carrier injection efficiency, due to the large surface recombination, is the primary cause for the extremely low output power of phosphor-free nanowire white LEDs. We have further developed InGaN/GaN/AlGaN dot-in-a-wire core-shell white LEDs on Si substrate, which can break the carrier injection efficiency bottleneck, leading to a massive enhancement in the output power. At room temperature, the devices can exhibit an output power of ∼1.5 mW, which is more than 2 orders of magnitude stronger than nanowire LEDs without shell coverage. Additionally, such phosphor-free nanowire white LEDs can deliver an unprecedentedly high color rendering index of ∼92-98 in both the warm and cool white regions, with the color rendering capability approaching that of an ideal light source, i.e. a blackbody.

Original languageEnglish (US)
Pages (from-to)5437-5442
Number of pages6
JournalNano Letters
Volume13
Issue number11
DOIs
StatePublished - Nov 13 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • GaN
  • Nanowire
  • light emitting diode
  • quantum dot
  • surface recombination

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