Calculation of emissivity of Si wafers

Bhushan Sopori; Wei Chen; Jamal Madjdpour; N. M. Ravindra

doi:10.1007/s11664-999-0126-7

Calculation of emissivity of Si wafers

Bhushan Sopori
, Wei Chen
, Jamal Madjdpour
, N. M. Ravindra

Physics

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

A computer-software, EMISSIVITY, has been developed to calculate the emissivity (ε) of silicon wafers of any surface morphology, for a given temperature and dopant concentration. The software uses a combination of ray- and wave-optics approaches to include the interference and the polarization effects necessary for multilayer surface coatings and multi-reflections within thin wafers. The refractive index and the absorption coefficient are calculated as a function of temperature and dopant concentration using an empirical model for an indirect bandgap semiconductor. The results of this model are compared with conventional emissivity calculations and experimental data.

Original language	English (US)
Pages (from-to)	1385-1389
Number of pages	5
Journal	Journal of Electronic Materials
Volume	28
Issue number	12
DOIs	https://doi.org/10.1007/s11664-999-0126-7
State	Published - Dec 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-999-0126-7

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title = "Calculation of emissivity of Si wafers",

abstract = "A computer-software, EMISSIVITY, has been developed to calculate the emissivity (ε) of silicon wafers of any surface morphology, for a given temperature and dopant concentration. The software uses a combination of ray- and wave-optics approaches to include the interference and the polarization effects necessary for multilayer surface coatings and multi-reflections within thin wafers. The refractive index and the absorption coefficient are calculated as a function of temperature and dopant concentration using an empirical model for an indirect bandgap semiconductor. The results of this model are compared with conventional emissivity calculations and experimental data.",

author = "Bhushan Sopori and Wei Chen and Jamal Madjdpour and Ravindra, \{N. M.\}",

note = "Funding Information: This work was supported by the US Department of Energy under the subcontract \#DE-AC36-98-G010337, and by the Center of Excellence for Synthesis and Processing of Advanced Materials.",

year = "1999",

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doi = "10.1007/s11664-999-0126-7",

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volume = "28",

pages = "1385--1389",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Calculation of emissivity of Si wafers

AU - Sopori, Bhushan

AU - Chen, Wei

AU - Madjdpour, Jamal

AU - Ravindra, N. M.

N1 - Funding Information: This work was supported by the US Department of Energy under the subcontract #DE-AC36-98-G010337, and by the Center of Excellence for Synthesis and Processing of Advanced Materials.

PY - 1999/12

Y1 - 1999/12

N2 - A computer-software, EMISSIVITY, has been developed to calculate the emissivity (ε) of silicon wafers of any surface morphology, for a given temperature and dopant concentration. The software uses a combination of ray- and wave-optics approaches to include the interference and the polarization effects necessary for multilayer surface coatings and multi-reflections within thin wafers. The refractive index and the absorption coefficient are calculated as a function of temperature and dopant concentration using an empirical model for an indirect bandgap semiconductor. The results of this model are compared with conventional emissivity calculations and experimental data.

AB - A computer-software, EMISSIVITY, has been developed to calculate the emissivity (ε) of silicon wafers of any surface morphology, for a given temperature and dopant concentration. The software uses a combination of ray- and wave-optics approaches to include the interference and the polarization effects necessary for multilayer surface coatings and multi-reflections within thin wafers. The refractive index and the absorption coefficient are calculated as a function of temperature and dopant concentration using an empirical model for an indirect bandgap semiconductor. The results of this model are compared with conventional emissivity calculations and experimental data.

UR - https://www.scopus.com/pages/publications/0033281334

UR - https://www.scopus.com/pages/publications/0033281334#tab=citedBy

U2 - 10.1007/s11664-999-0126-7

DO - 10.1007/s11664-999-0126-7

M3 - Article

AN - SCOPUS:0033281334

SN - 0361-5235

VL - 28

SP - 1385

EP - 1389

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Calculation of emissivity of Si wafers

Abstract

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