Can oxidation and other treatments help us understand the nature of light-emitting porous silicon?

P. M. Fauchet, E. Ettedgui, A. Raisanen, L. J. Brillson, F. Seiferth, S. K. Kurinec, Y. Gao, C. Peng, L. Tsybeskov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Scopus citations

Abstract

Using a careful analysis of the properties of light-emitting porous silicon (LEpSi), we conclude that a version of the 'smart' quantum confinement model which was first proposed by F. Koch et al [Mat. Res. Soc. Symp. Proc. 283, 197 (1993)] and allows for the existence of surface states and dangling bonds, is compatible with experimental results. Among the new results we present in support of this model, the most striking ones concern the strong infrared photoluminescence that dominates the room temperature cw spectrum after vacuum annealing above 600 K.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages271-276
Number of pages6
ISBN (Print)1558991948, 9781558991941
DOIs
StatePublished - 1993
Externally publishedYes
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: Apr 12 1993Apr 14 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume298
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA
Period4/12/934/14/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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