CAPACITANCE STUDIES OF METASTABLE DEFECT CREATION IN HYDROGENATED AMORPHOUS SILICON.

J. D. Cohen, K. Mahavadi, K. Zellama, J. P. Harbison, A. E. Delahoy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Authors have studied the light induced instability problem in hydrogenated amorphous silicon using junction capacitance techniques. These techniques are used to examine specific changes in the density of gap states and occupation of gap states, for undoped a-Si:H samples after light saturation and for a series of partial anneal 'states' which culminate in the original dark annealed state (state A). We find that the observed changes in the metastable occupied and unoccupied defects contradict the Si-Si bond breaking model and indicate at least two defect creation processes. In several samples we also find clear evidence that the metastable defect distribution near midgap has a slightly different energy distribution than the stable deep state (dangling bond) distribution. At the same time, these results seem to be qualitatively consistent with many aspects of recent ESR and optical absorption studies of metastable defect creation. Authors discuss these findings in terms of alternative possible microscopic models for metastable effects in a-Si:H.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages213-224
Number of pages12
ISBN (Print)0931837367, 9780931837364
DOIs
StatePublished - Jan 1 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume70
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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