Carrier concentration tuning of bandgap-reduced p -type ZnO films by codoping of Cu and Ga for improving photoelectrochemical response

Sudhakar Shet, Kwang Soon Ahn, Yanfa Yan, Todd Deutsch, Kevin M. Chrustowski, John Turner, Mowafak Al-Jassim, Nuggehalli Ravindra

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73 Scopus citations

Abstract

In this study, the synthesis of p -type ZnO films with similar bandgaps but varying carrier concentrations through codoping of Cu and Ga is reported. The ZnO:(Cu,Ga) films are synthesized by rf magnetron sputtering in O2 gas ambient at room temperature, followed by postdeposition annealing at 500 °C in air for 2 h. The bandgap reduction and p -type conductivity are caused by the incorporation of Cu. The tuning of carrier concentration is realized by varying the Ga concentration. The carrier concentration tuning does not significantly change the bandgap and crystallinity. However, it can optimize the carrier concentration to significantly enhance the photoelectrochemical response for bandgap-reduced p -type ZnO thin films.

Original languageEnglish (US)
Article number073504
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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